ZHCSFS9A December   2016  – March 2019 CSD18512Q5B

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     俯视图
      1.      Device Images
        1.       RDS(on) 与 VGS 对比
        2.       栅极电荷
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 社区资源
    2. 6.2 商标
    3. 6.3 静电放电警告
    4. 6.4 术语表
  7. 7"机械、封装和可订购信息
    1. 7.1 Q5B 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模板布局
    4. 7.4 Q5B 卷带信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain to source voltage VGS = 0 V, ID = 250 μA 40 V
IDSS Drain to source leakage current VGS = 0 V, VDS = 32 V 1 μA
IGSS Gate to source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate to source threshold voltage VDS = VGS, ID = 250 μA 1.3 1.6 2.2 V
RDS(on) Drain to source on resistance VGS = 4.5 V, ID = 30 A 1.8 2.3 mΩ
VGS = 10 V, ID = 30 A 1.3 1.6 mΩ
gfs Transconductance VDS = 20 V, ID = 30 A 136 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ= 1 MHz 5480 7120 pF
Coss Output capacitance 537 699 pF
Crss Reverse transfer capacitance 256 333 pF
RG Series gate resistance 1.0 2.0 Ω
Qg Gate charge total (4.5 V) VDS = 20 V, ID = 30 A 37 48 nC
Qg Gate charge total (10 V) 75 98 nC
Qgd Gate charge gate to drain 13.3 nC
Qgs Gate charge gate to source 15.1 nC
Qg(th) Gate charge at Vth 8.2 nC
Qoss Output charge VDS = 20 V, VGS = 0 V 23 nC
td(on) Turn on delay time VDS = 20 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		 7 ns
tr Rise time 16 ns
td(off) Turn off delay time 31 ns
tf Fall time 7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 30 A, VGS = 0 V 0.75 1.0 V
Qrr Reverse recovery charge VDS= 20 V, IF = 30 A,
di/dt = 300 A/μs		 22 nC
trr Reverse recovery time 17 ns