ZHCSKK4C February   2010  – December 2019 CSD17308Q3

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     俯视图
      1.      Device Images
        1.       RDS(on) 与 VGS 对比
        2.       栅极电荷
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 支持资源
    2. 6.2 商标
    3. 6.3 静电放电警告
    4. 6.4 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q3 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模版开孔
    4. 7.4 Q3 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.9 1.3 1.6 V
RDS(on) Drain-to-source on-resistance VGS = 3 V, ID = 10 A 12.5 16.5 mΩ
VGS = 4.5 V, ID = 10 A 9.4 11.8
VGS = 8 V, ID = 10 A 8.2 10.3
gfs Transconductance VDS = 15 V, ID = 10 A 37 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 540 700 pF
COSS Output capacitance 280 365 pF
CRSS Reverse transfer capacitance 27 35 pF
Rg Series gate resistance 0.9 1.8 Ω
Qg Gate charge total (4.5 V) VDS = 15 V, ID = 10 A 3.9 5.1 nC
Qgd Gate charge gate-to-drain 0.8 nC
Qgs Gate charge gate-to-source 1.3 nC
Qg(th) Gate charge at Vth 0.7 nC
QOSS Output charge VDS = 13 V, VGS = 0 V 7.4 nC
td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V, ID = 10 A,
RG = 2 Ω		 4.5 ns
tr Rise time 5.7 ns
td(off) Turnoff delay time 9.9 ns
tf Fall time 2.3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 10 A, VGS = 0 V 0.85 1 V
Qrr Reverse recovery charge VDD = 13 V, IF = 10 A, di/dt = 300 A/μs 9.3 nC
trr Reverse recovery time 14.3 ns