4 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
Static Characteristics
BV_DSS	Drain to Source Voltage	V_GS = 0 V, I_D = 250 μA	25			V
I_DSS	Drain to Source Leakage Current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate to Source Leakage Current	V_DS = 0 V, V_GS = +10/–8 V			100	nA
V_GS(th)	Gate to Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	0.9	1.1	1.4	V
R_DS(on)	Drain to Source On Resistance	V_GS = 3 V, I_D = 30 A		2.1	2.9	mΩ
		V_GS = 4.5 V, I_D = 30 A		1.7	2.2	mΩ
		V_GS = 8 V, I_D = 30 A		1.5	2	mΩ
g_fs	Transconductance	V_DS = 15 V, I_D = 30 A		159		S
Dynamic Characteristics
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 12.5 V, ƒ = 1 MHz		3070	4000	pF
C_oss	Output Capacitance			2190	2850	pF
C_rss	Reverse Transfer Capacitance			120	150	pF
R_G	Series Gate Resistance			1.6	3.2	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 12.5 V, I_DS = 30 A		18	25	nC
Q_gd	Gate Charge – Gate to Drain			3.5		nC
Q_gs	Gate Charge – Gate to Source			6.6		nC
Q_g(th)	Gate Charge at Vth			3.3		nC
Q_oss	Output Charge	V_DS = 13 V, V_GS = 0 V		43		nC
t_d(on)	Turn On Delay Time	V_DS = 12.5 V, V_GS = 4.5 V, I_DS = 30 A, R_G =2 Ω		10.5		ns
t_r	Rise Time			16		ns
t_d(off)	Turn Off Delay Time			32		ns
t_f	Fall Time			12		ns
Diode Characteristics
V_SD	Diode Forward Voltage	I_DS = 30 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DD = 10 V, I_F = 30 A, di/dt = 300 A/μs		63		nC
t_rr	Reverse Recovery Time	V_DD = 10 V, I_F = 30 A, di/dt = 300 A/μs		47		ns