ZHCSU29E 数据表 | 德州仪器 TI.com.cn

ZHCSU29E August 2009 – December 2023 CSD16321Q5

PRODUCTION DATA

4.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

V_DS = 12.5 V

I_D = 25 A

Figure 4-4 Gate Charge

I_D = 250 µA

Figure 4-6 Threshold Voltage vs Temperature

I_D = 25 A

V_GS = 8 V

Figure 4-8 On Resistance vs Temperature

Single pulse, max R_θJC = 1.1°C/W

Figure 4-10 Maximum Safe Operating Area

Figure 4-12 Maximum Drain Current vs Temperature

V_DS = 5 V

Figure 4-3 Transfer Characteristics

Figure 4-5 Capacitance

Figure 4-7 On Resistance vs Gate Voltage

Figure 4-9 Typical Diode Forward Voltage

Figure 4-11 Single Pulse Unclamped Inductive Switching