ZHCSD46C December   2014  – February 2022 CSD13383F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 支持资源
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA12V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 9.6 V1µA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 10 V10µA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA0.701.001.25V
RDS(on)Drain-to-source on-resistanceVGS = 2.5 V, IDS = 0.5 A5365mΩ
VGS = 4.5 V, IDS = 0.5 A3744mΩ
gfsTransconductanceVDS = 6 V, IDS = 0.5 A5.4S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 6 V,
ƒ = 1 MHz		224291pF
CossOutput capacitance6888pF
CrssReverse transfer capacitance4761pF
RGSeries gate resistance240Ω
QgGate charge total (4.5 V)VDS = 6 V, IDS = 0.5 A2.02.6nC
QgdGate charge gate-to-drain0.6nC
QgsGate charge gate-to-source0.4nC
Qg(th)Gate charge at Vth0.1nC
QossOutput chargeVDS = 6 V, VGS = 0 V0.9nC
td(on)Turn on delay timeVDS = 6 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω		46ns
trRise time122ns
td(off)Turn off delay time250ns
tfFall time290ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 0.5 A, VGS = 0 V0.71.0V