ZHCSBN3F August   2013  – March 2019

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
      2.      充电器效率
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Maximum Power Point Tracking
      2. 7.3.2 Battery Undervoltage Protection
      3. 7.3.3 Battery Overvoltage Protection
      4. 7.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 7.3.5 Push-Pull Multiplexer Drivers
      6. 7.3.6 Nano-Power Management and Efficiency
    4. 7.4 Device Functional Modes
      1. 7.4.1 Main Boost Charger Disabled (Ship Mode) - (VSTOR > VSTOR_CHGEN and EN = HIGH)
      2. 7.4.2 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      3. 7.4.3 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      4. 7.4.4 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Energy Harvester Selection
      2. 8.1.2 Storage Element Selection
      3. 8.1.3 Inductor Selection
      4. 8.1.4 Capacitor Selection
        1. 8.1.4.1 VREF_SAMP Capacitance
        2. 8.1.4.2 VIN_DC Capacitance
        3. 8.1.4.3 VSTOR Capacitance
        4. 8.1.4.4 Additional Capacitance on VSTOR or VBAT_SEC
    2. 8.2 Typical Applications
      1. 8.2.1 Solar Application Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Performance Plots
      2. 8.2.2 TEG Application Circuit
      3. 8.2.3 Design Requirements
        1. 8.2.3.1 Detailed Design Procedure
        2. 8.2.3.2 Application Performance Plots
      4. 8.2.4 Piezoelectric Application Circuit
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
        3. 8.2.4.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 Zip 文件
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.1.2 Detailed Design Procedure

The recommended L1 = 22 µH, CBYP = 0.01 µF and low leakage CREF = 10 nF are selected. In order to ensure the fastest recovery of the harvester output voltage to the MPPT level following power extraction, the minimum recommended CIN = 4.7 µF is selected. Because no large system load transients are expected and to ensure fast charge time during cold start, the minimum recommended CSTOR = 4.7 µF.

No MPPT resistors are required because VOC_SAMP can be tied to VSTOR to give 80% MPPT.

  • Keeing in mind VBAT_UV < VBAT_OV ≤ 5.5 V, to size the VBAT_OV resistors, first choose RSUMOV = ROV1 + ROV2 = 13 MΩ then solve Equation 2 for
    • Equation 11. bq25505 Eq11_Rov1_slusbj3.gif
  • ROV2 = RSUMOV - ROV1 = 13 MΩ - 5.62 MΩ = 7.38 MΩ → 7.32 MΩ resulting in VBAT_OV = 4.18V due to rounding to the nearest 1% resistor.
  • Keeping in mind VBAT_OV ≥ VBAT_OK_HYST > VBAT_OK ≥ VBAT_UV, to size the VBAT_OK and VBAT_OK_HYST resistors, first choose RSUMOK = ROK1 + ROK2 + ROK3 = 13 MΩ then solve Equation 3 and Equation 4 for
    • Equation 12. bq25505 Eq12_ROK1_slusbj3.gif
    Equation 13. bq25505 Eq13_ROK2_slusbj3.gif
  • ROK3 = RSUMOK - ROK1 - ROK2 = 13 MΩ - 5.62 MΩ - 5.479 MΩ = 1.904 MΩ → 1.87 MΩ to give VBAT_OK = 2.39 V and VBAT_OK_HYST = 2.80 V.

SLUC484 provides help on sizing and selecting the resistors.