SNVS424D January   2006  – December 2014 LM5106

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-up and UVLO
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Power Dissipation Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 HS Transient Voltages Below Ground
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

1 Features

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Output Sink Current
  • 1.2-A Peak Output Source Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead-Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (32 ns Typical)
  • Drives 1000 pF With 15-ns Rise and 10-ns Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 10-Pin WSON Package (4 mm × 4 mm) and 10-Pin VSSOP Package

2 Applications

  • Solid-State Motor Drives
  • Half-Bridge and Full-Bridge Power Converters
  • Two Switch Forward Power Converters

3 Description

The LM5106 is a high-voltage gate driver designed to drive both the high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver can work with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turnon delay circuits. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout (UVLO) disables the gate driver when either the low side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5106 is offered in the 10-pin VSSOP or the thermally enhanced 10-pin WSON plastic package.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM5106 VSSOP (10) 3.00 mm × 3.00 mm
WSON (10) 4.00 mm × 4.00 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Simplified Block Diagram

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