ZHCSSW7A june   2023  – august 2023 UCC27311A-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Timing Diagrams
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stages
      2. 8.3.2 Enable
      3. 8.3.3 Undervoltage Lockout (UVLO)
      4. 8.3.4 Level Shifter
      5. 8.3.5 Boot Diode
      6. 8.3.6 Output Stages
      7. 8.3.7 Negative Voltage Transients
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Threshold Type
        2. 9.2.2.2 VDD Bias Supply Voltage
        3. 9.2.2.3 Peak Source and Sink Currents
        4. 9.2.2.4 Propagation Delay
        5. 9.2.2.5 Power Dissipation
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1.      55
    2. 13.2 Tape and Reel Information
    3. 13.3 Mechanical Data

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRC|10
散热焊盘机械数据 (封装 | 引脚)

7.6 Switching Characteristics

VDD = VHB = 12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = –40°C to +150°C, (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PROPAGATION DELAYS
tDLFF VLI falling to VLO falling CLOAD = 0 pF, from VLIT of LI to 90% of LO falling 16 ns
tDHFF VHI falling to VHO falling CLOAD = 0 pF,  from VLIT of HI to 90% of HO falling 16 ns
tDLRR VLI rising to VLO rising CLOAD = 0 pF, from VHIT of LI to 10% of LO rising 20 ns
tDHRR VHI rising to VHO rising CLOAD = 0 pF, CLOAD = 0 pF, from VHIT of HI to 10% of HO rising 20 ns
DELAY MATCHING
tMON LI ON, HI OFF TJ = 25°C, from 10% of LO rising to 90% of HO falling 4 9.5 ns
tMON LI ON, HI OFF TJ = -40°C to 150°C, from 10% of LO rising to 90% of HO falling 4 17 ns
tMOFF LI OFF, HI ON TJ = 25°C, from 90% of LO falling to 10% of HO rising 4 9.5 ns
tMOFF LI OFF, HI ON TJ = -40°C to 150°C, from 90% of LO falling to 10% of HO rising 4 17 ns
OUTPUT RISE AND FALL TIME
tR_LO LO rise time CLOAD = 1000 pF, from 10% to 90% 7.2 ns
tR_HO HO rise time CLOAD = 1000 pF, from 10% to 90% 7.2 ns
tF_LO LO fall time CLOAD = 1000 pF, from 10% to 90% 5.5 ns
tF_HO HO fall time CLOAD = 1000 pF, from 10% to 90% 5.5 ns
tR_LO_p1 LO rise time (3 V to 9 V) CLOAD = 0.1 μF, (3V to 9V) 0.36 0.6 μs
tR_HO_p1 HO rise time (3 V to 9 V) CLOAD = 0.1 μF, (3V to 9V) 0.36 0.6 μs
tF_LO_p1 LO fall time (9 V to 3 V) CLOAD = 0.1 μF, (9V to 3V) 0.15 0.4 μs
tF_HO_p1 HO fall time (9 V to 3 V) CLOAD = 0.1 μF, (9V to 3V) 0.15 0.4 μs
MISCELLANEOUS
tIN_PW Minimum input pulse width that changes the output  LO 50 ns
tIN_PW Minimum input pulse width that changes the output  HO 50 ns
tOFF_BSD Bootstrap diode turnoff time(1)(2) IF = 20 mA, IREV = 0.5 A(3) 20 ns
(1) Parameter not tested in production.
(2) Typical values for TA = 25°C.
(3) IF: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode.