ZHCSKL2A December   2019  – May 2022 TUSS4470

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power-Up Characteristics
    6. 6.6  Transducer Drive
    7. 6.7  Receiver Characteristics
    8. 6.8  Echo Interrupt Comparator Characteristics
    9. 6.9  Digital I/O Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excitation Power Supply (VDRV)
      2. 7.3.2 Burst Generation
        1. 7.3.2.1 Burst Generation Diagnostics
      3. 7.3.3 Direct Transducer Drive
      4. 7.3.4 Analog Front End
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
    6. 7.6 Register Maps
      1. 7.6.1 REG_USER Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Transducer Drive Configuration Options
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Transducer Driving Voltage
          2. 8.2.1.2.2 Transducer Driving Frequency
          3. 8.2.1.2.3 Transducer Pulse Count
        3. 8.2.1.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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9 Power Supply Recommendations

The TUSS4470 device is designed to operate from two independent supplies, a driver supply and a regulated supply.

The driver input voltage supply (VPWR) range can operate from 5 V to 36 V. In applications where the TUSS4470 device may be exposed to battery transients and reverse battery currents, use external component-safeguards, such as component D1 or parallel TVS diodes, to help protect the device. If the input supply is placed more than a few inches from the TUSS4470 device, additional bulk capacitance may be required in addition to the ceramic bypass capacitors near the VPWR pin. In the event both the VDRV and pre-driver modes is enabled, limit the VPWR voltage to the maximum rated voltage of the externally driven transistor’s gate-source or base-emitter rating. The electrolytic capacitor at the VDRV pin is intended to act as a fast discharge capacitor during the bursting stage of the TUSS4470 device. The H-bridge high-side voltage can be supplied with an independent voltage at the VDRV pin to isolate the driver from VPWR, but must remain within the specified maximum voltage rating of the VDRV, OUTA, and OUTB outputs. If the H-bridge high-side voltage is to be supplied by an independent source, VDRV should be disabled.

The regulated supply (VDD) is used as the supply reference for the analog front end, filtering, and analog output blocks, so this supply should be stable for maximum performance. TI recommends using an LDO or other regulated external power source with bypass capacitor placed closely to the VDD pin. As VDD becomes less stable, the noise floor of the VOUT signal will increase, and result in a loss of long range object detection as a consequence.

To prevent damage to the device, always avoid hot-plugging or providing instantaneous power at the VPWR and VDRV pins at start-up, unless these pins are properly protected with an RC filter or TVS diode to minimize transient effects. VPWR must always be equal to or greater than the value present at VDRV.