ZHCSEO6B DECEMBER   2012  – December 2015 TPS92560

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VCC Regulator
      2. 7.3.2 MOSFET Driver
      3. 7.3.3 ADJ Pin
        1. 7.3.3.1 Output OVP
      4. 7.3.4 AC1 and AC2 Pins
      5. 7.3.5 Detection of Power Source
      6. 7.3.6 Current Regulation
      7. 7.3.7 Switching Frequency (Boost Configuration)
      8. 7.3.8 Inductor Selection (Boost Configuration)
      9. 7.3.9 Input Surge Voltage Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Thermal Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Boost Application Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Calculate Values for the ADJ Resistors
          2. 8.2.1.2.2 Calculate the Sense Voltage and Sense Resistor Value
          3. 8.2.1.2.3 Calculate the Inductor Value
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Boost Application Circuit With LED Current Regulation
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Application Curves
      3. 8.2.3 SEPIC Application Circuit With LED Current Regulation
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.(1)
MIN MAX UNIT
SRC, SEN, ADJ –0.3 5 V
AC1, AC2 –1 45 V
VP –0.3 45 V
VCC –0.3 12 V
TJ Junction temperature –40 125 °C
Tstg Storage temperature –65 150 °C
(1) Absolute Maximum Ratings are limits which damage to the device may occur. Operating ratings are conditions under which operation of the device is intended to be functional. For specified specifications and test conditions, see the electrical characteristics.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VP Supply voltage 6.5 42 V
TJ Junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS92560 UNIT
DGQ (HVSSOP)
10 PINS
RθJA Junction-to-ambient thermal resistance 55.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.7 °C/W
RθJB Junction-to-board thermal resistance 32.1 °C/W
ψJT Junction-to-top characterization parameter 1.3 °C/W
ψJB Junction-to-board characterization parameter 31.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Over recommended operating conditions with -40°C ≤ TJ ≤ 125°C. Unless otherwise stated the following conditions apply: VVP = 12V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IIN VIN Operating current 6.5 V < VVP < 42 V 0.7 1.4 1.95 mA
VCC REGULATOR
VCC VCC Regulated voltage(1) ICC ≤ 10 mA, CVCC =0.47 µF
12 V < VVP < 42 V		 7.82 8.45 9.08 V
ICC = 10 mA, CVCC =0.47 µF VVP = 6.5 V 5.22 5.8 6.18
ICC = 0 mA, CVCC =0.47 µF VVP = 2 V 1.96 2
ICC-LIM VCC Current limit VCC = 0 V 6.5 V < VVP < 42 V 21 30 39 mA
VCC-UVLO-UPTH VCC UVLO upper threshold 5 5.38 5.76 V
VCC-UVLO-LOTH VCC UVLO lower threshold 4.63 4.98 5.33 V
VCC-UVLO-HYS VCC UVLO hysteresis 190 400 640 mV
MOSFET GATE DRIVER
VGATE-HIGH Gate driver output high w.r.t. SRC
Sinking 100mA from GATE
Force VCC = 8.5 V		 7.61 8.1 8.5 V
VGATE-LOW Gate driver output low w.r.t. SRC
Sourcing 100 mA to GATE		 100 180 290 mV
tRISE VGATE Rise time CGATE = 1 nF across GATE and SRC 22 ns
tFALL VGATE Fall time CGATE = 1 nF across GATE and SRC 14 ns
tRISE-PG-DELAY VGATE Low-to-high propagation delay CGATE = 1 nF across GATE and SRC 68 ns
tFALL-PG-DELAY VGATE High-to-low propagation delay CGATE = 1 nF across GATE and SRC 84 ns
CURRENT SOURCE AT ADJ PIN
IADJ-STARTUP Output current of ADJ pin at start-up VADJ = 0 V 16 20 24 µA
IADJ-ELEC-XFR Output current of ADJ pin for electronic transformers An Electronic transformer is detected 8 11.5 15 µA
IADJ-MAG-XFR Output current of ADJ pin for inductive transformers A magnetic transformer is detected 7 9.5 12 µA
CURRENT SENSE COMPARATOR
VSEN-UPPER-TH VSEN Upper threshold over VADJ VSEN-VADJ, VADJ=0.2 V, VGATE at falling edge 8.9 14.9 20.9 mV
VSEN-LOWER-TH VSEN Lower threshold over VADJ VSEN-VADJ, VADJ=0.2 V VGATE at rising edge -20.6 –14.9 -8.8 mV
VSEN-HYS VSEN Hysteresis (VSEN-UPPER-TH - VSEN-LOWER-TH) 22.5 29.8 37.5 mV
VSEN-OFFSET VSEN Offset w.r.t. VADJ (VSEN-UPPER-TH + VSEN-LOWER-TH)/2 -3.5 0.02 3.5 mV
ACTIVE LOW-SIDE INPUT RECTIFIERS
RACn-ON In resistance of AC1 and AC2 to GND IACn = 200 mA 300 570 mΩ
VACn-ON-TH Turn ON voltage threshold of AC1 and AC2 VACn Decreasing, TJ = 25°C 36 52 67 mV
VACn-OFF-TH Turn OFF voltage threshold of AC1 and AC2 VACn Increasing, TJ = 25°C 77 90 104 mV
VACn-TH-HYS Hysteresis voltage of AC1 and AC2 VACn-OFF-TH - VACn-ON-TH 39 mV
IACn-OFF Off current of AC1 and AC2 VACn = 45 V 21 32 µA
OUTPUT OVERVOLTAGE-PROTECTION (OVP)
VADJ-OVP-UPTH Output overvoltage-detection upper threshold VADJ Increasing, VGATE at falling edge 0.353 0.384 0.415 V
VADJ-OVP-LOTH Output overvoltage-detection lower threshold VADJ Decreasing, VGATE at rising edge 0.312 0.339 0.366 V
VADJ-OVP-HYS Output overvoltage-detection hysteresis VADJ-OVP-UPTH - VADJ-OVP-LOTH 25 46 67 mV
THERMAL SHUTDOWN
TSD Thermal shutdown temperature TJ Rising 165 °C
TSD-HYS Thermal shutdown temperature hysteresis TJ Falling 30 °C
(1) VCC provides self bias for the internal gate drive and control circuits. Device thermal limitations limit external loading.

6.6 Typical Characteristics

All curves taken for the boost circuit are with 500-mA nominal input current and 6 serial LEDs. All curves taken for the SEPIC circuit are with 500-mA nominal input current and 3 serial LEDs.TA = –40°C to 125°C, unless otherwise specified.
TPS92560 C001_SNVS900.png
Figure 1. Operation Current vs Temperature
TPS92560 C003_SNVS900.png
Figure 3. VCC UVLO Rising Threshold vs Temperature
VVP = 12 V, GATE = Hi
TPS92560 C005_SNVS900.png
Figure 5. ACn Turn Off Threshold vs Temperature
TPS92560 C007_SNVS900.png
Figure 7. Output Current (BOOST) vs Temperature
TPS92560 C009_SNVS900.png
Figure 9. Output Power (BOOST) vs Temperature
TPS92560 C011_SNVS900.png
Figure 11. Efficiency (BOOST) vs Temperature
TPS92560 C002_SNVS900.png
Figure 2. VCC vs Temperature (IVCC = 0 mA)
TPS92560 C004_SNVS900.png
Figure 4. VCC UVLO Falling Threshold vs Temperature
VVP = 12 V, GATE = Low
TPS92560 C006_SNVS900.png
Figure 6. ACn Turn On Threshold vs Temperature
TPS92560 C008_SNVS900.png
Figure 8. Output Current (SEPIC) vs Temperature
TPS92560 C010_SNVS900.png
Figure 10. Output Power (SEPIC) vs Temperature
TPS92560 C012_SNVS900.png
Figure 12. Efficiency (SEPIC) vs Temperature