ZHCSHU2B March   2018  – October 2018 TPS7A10

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      压降与 IOUT 和温度间的关系（YKA 封装）
      2.      典型应用电路
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excellent Transient Response
      2. 7.3.2 Global Undervoltage Lockout (UVLO)
      3. 7.3.3 Active Discharge
      4. 7.3.4 Enable
      5. 7.3.5 Sequencing Requirement
      6. 7.3.6 Internal Foldback Current Limit
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disable Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitor Requirements
      3. 8.1.3 Load Transient Response
      4. 8.1.4 Dropout Voltage
      5. 8.1.5 Behavior During Transition From Dropout Into Regulation
      6. 8.1.6 Undervoltage Lockout Circuit Operation
      7. 8.1.7 Power Dissipation (PD)
        1. 8.1.7.1 Estimating Junction Temperature
        2. 8.1.7.2 Recommended Area for Continuous Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Current
        2. 8.2.2.2 Thermal Dissipation
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 评估模块
        2. 11.1.1.2 Spice 模型
      2. 11.1.2 器件命名规则
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DSE|6
  • YKA|5
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.7 Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when the thermal junction temperature (TJ) of the main pass-FET rises to the thermal shutdown temperature (TSD ) for shutdown listed in the Electrical Characteristics. Thermal shutdown hysteresis makes sure that the LDO resets again (turns on) when the temperature falls to the TSD for reset.

The thermal time constant of the semiconductor die is fairly short, and thus the device may cycle on and off when thermal shutdown is reached until the power dissipation is reduced.

For reliable operation, limit the junction temperature to a maximum of 125°C. Operation above 125°C causes the device to exceed the operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above a junction temperature of 125°C reduces long-term reliability.

A fast start up when TJ > the TSD for reset causes the device thermal shutdown to assert at TSD for reset, and prevents the device from turning on until the junction temperature is reduced below TSD for reset.