ZHCSCN2 July   2014 TPS57114-EP

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 说明（续）
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 Handling Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Fixed-Frequency Pwm Control
      2. 9.3.2  Slope Compensation and Output Current
      3. 9.3.3  Bootstrap Voltage (Boot) and Low-Dropout Operation
      4. 9.3.4  Error Amplifier
      5. 9.3.5  Voltage Reference
      6. 9.3.6  Adjusting the Output Voltage
      7. 9.3.7  Enable Functionality and Adjusting UVLO
      8. 9.3.8  Slow-Start or Tracking Pin
      9. 9.3.9  Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
      10. 9.3.10 Overcurrent Protection
      11. 9.3.11 Frequency Shift
      12. 9.3.12 Reverse Overcurrent Protection
      13. 9.3.13 Synchronize Using the RT/CLK Pin
      14. 9.3.14 Power Good (PWRGD Pin)
      15. 9.3.15 Overvoltage Transient Protection (OVTP)
      16. 9.3.16 Thermal Shutdown
      17. 9.3.17 Small-Signal Model for Loop Response
      18. 9.3.18 Simple Small-Signal Model for Peak-Current Mode Control
      19. 9.3.19 Small-Signal Model for Frequency Compensation
    4. 9.4 Device Functional Modes
      1. 9.4.1 RT (Resistor Timing) Mode
      2. 9.4.2 CLK (External Clock) Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Sequencing
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selecting the Switching Frequency
        2. 10.2.2.2 Output Inductor Selection
        3. 10.2.2.3 Output Capacitor
        4. 10.2.2.4 Input Capacitor
        5. 10.2.2.5 Slow-Start Capacitor
        6. 10.2.2.6 Bootstrap Capacitor Selection
        7. 10.2.2.7 Output-Voltage and Feedback-Resistor Selection
        8. 10.2.2.8 Compensation
        9. 10.2.2.9 Power-Dissipation Estimate
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Input voltage VIN –0.3 7 V
EN –0.3 7
BOOT PH + 7
VSENSE –0.3 3
COMP –0.3 3
PWRGD –0.3 7
SS/TR –0.3 3
RT/CLK –0.3 7
Output voltage BOOT-PH 7 V
PH –0.6 7
PH 10-ns transient –2 10
Source current EN 100 µA
RT/CLK 100 µA
Sink current COMP 100 µA
PWRGD 10 mA
SS/TR 100 µA
Temperature TJ –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

8.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –4000 4000 V
Machine model (MM) –200 200
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –1500 1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V(VIN) Input voltage 2.95 6 V
TA Operating ambient temperature –55 125 °C
TJ Operating junction temperature –55 150 °C

8.4 Thermal Information

THERMAL METRIC(1) TPS57114-EP UNIT
RTE
16 PINS
RθJA Junction-to-ambient thermal resistance(2) 44.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance(3) 46.1
RθJB Junction-to-board thermal resistance(4) 16
ψJT Junction-to-top characterization parameter(5) 0.7
ψJB Junction-to-board characterization parameter(6) 16.9
RθJC(bot) Junction-to-case (bottom) thermal resistance(7) 4.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

8.5 Electrical Characteristics

TJ = –55°C to 150°C, VIN = 2.95 to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
Internal undervoltage-lockout threshold VIN UVLO START 2.28 2.5 V
VIN UVLO STOP 2.45 2.6 V
Shutdown supply current V(EN) = 0 V, 2.95 V ≤ V(VIN) ≤ 6 V 5.5 15 µA
Quiescent current – Iq V(VSENSE) = 0.9 V, V(VIN) = 5 V, RT = 400 kΩ 515 750 µA
ENABLE AND UVLO (EN PIN)
Enable threshold Rising 1.25 V
Falling 1.18
Input current Enable threshold + 50 mV –3.2 µA
Enable threshold – 50 mV –1.65
VOLTAGE REFERENCE (VSENSE PIN)
Voltage reference 2.95 V ≤ V(VIN) ≤ 6 V, –55°C < TJ < 150°C 0.79 0.8 0.81 V
MOSFET
High-side switch resistance BOOT-PH = 5 V 12 30 mΩ
BOOT-PH = 2.95 V 16 30
Low-side switch resistance V(VIN) = 5 V 13 30 mΩ
V(VIN) = 2.95 V 17 30
ERROR AMPLIFIER
Input current 2 nA
Error-amplifier transconductance (gm) –2 µA < I(COMP) < 2 µA, V(COMP) = 1 V 245 µS
Error-amplifier transconductance (gm) during slow start –2 µA < I(COMP) < 2 µA, V(COMP) = 1 V,
V(VSENSE) = 0.4 V		 79 µS
Error-amplifier source and sink V(COMP) = 1 V, 100-mV overdrive ±20 µA
COMP to Iswitch gm 25 S
CURRENT LIMIT
Current-limit threshold V(VIN) = 2.95 V, 25°C < TJ < 150°C 5 6.4 A
TJ = –55°C 4
V(VIN) = 6 V, 25°C < TJ < 150°C 4.4 5.56
TJ = –55°C 4
THERMAL SHUTDOWN
Thermal shutdown 168 °C
Hysteresis 20 °C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Switching frequency range using RT mode 200 2000 kHz
Switching frequency R(RT/CLK) = 400 kΩ 400 500 600 kHz
Switching frequency range using CLK mode 300 2000 kHz
Minimum CLK pulse duration 80 ns
RT/CLK voltage R(RT/CLK) = 400 kΩ 0.5 V
RT/CLK high threshold 1.6 2.5 V
RT/CLK low threshold 0.4 0.6 V
RT/CLK falling edge to PH rising edge delay Measure at 500 kHz with RT resistor in series 90 ns
PLL lock in time Measure at 500 kHz 42 µs
PH (PH PIN)
Minimum on-time Measured at 50% points on PH, IOUT = 3.5 A 75 ns
Measured at 50% points on PH, V(VIN) = 6 V,
IOUT = 0 A		 120
Minimum off-time Prior to skipping off pulses, BOOT-PH = 2.95 V,
IOUT = 3.5 A		 60 ns
Rise time V(VIN) = 6 V, 3.5 A 2.25 V/ns
Fall time 2
BOOT (BOOT PIN)
BOOT charge resistance V(VIN) = 5 V 16 Ω
BOOT-PH UVLO V(VIN) = 2.95 V 2.1 V
SLOW START AND TRACKING (SS/TR PIN)
Charge current V(SS/TR) = 0.4 V 2 µA
SS/TR to VSENSE matching V(SS/TR) = 0.4 V 54 mV
SS/TR to reference crossover 98% normal 1.1 V
SS/TR discharge voltage (overload) V(VSENSE) = 0 V 60 mV
SS/TR discharge current (overload) V(VSENSE) = 0 V, V(SS/TR) = 0.4 V 350 µA
SS discharge current (UVLO, EN, thermal fault) V(VIN) = 5 V, V(SS) = 0.5 V 1.9 mA
POWER-GOOD (PWRGD PIN)
VSENSE threshold V(VSENSE) falling (fault) 91 %V(VREF)
V(VSENSE) rising (good) 93
V(VSENSE) rising (fault) 109
V(VSENSE) falling (good) 107
Hysteresis V(VSENSE) falling 2 %V(VREF)
Output high leakage V(VSENSE) = V(VREF), V(PWRGD) = 5.5 V 7 nA
On-resistance 56 100 Ω
Output low I(PWRGD) = 3 mA 0.3 V
Minimum VIN for valid output V(PWRGD) < 0.5 V at 100 µA 0.650 1.5 V
D021_SLVSCG0.gif
1. See data sheet for absolute maximum and minimum recommended operating conditions.
2. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life).
3. Enhanced plastic product disclaimer applies.
Figure 1. TPS57114-EP Derating Chart

8.6 Typical Characteristics

C001_SLVSCG0.png
Figure 2. High-Side and Low-Side rds(on) vs Temperature
C003_SLVSCG0.png
Figure 4. High-Side Current Limit vs Temperature
C005_SLVSCG0.png
Figure 6. Switching Frequency vs RT Resistance, Low-Frequency Range
C007_SLVSCG0.png
VIN = 3 V
Figure 8. Transconductance vs Temperature
C009_SLVSCG0.png
Figure 10. EN Pin Voltage vs Temperature
C011_SLVSCG0.png
VIN = 5 V VEN = Threshold –50 mV
Figure 12. EN Pin Current vs Temperature
C013_SLVSCG0.png
Figure 14. Input Voltage vs Temperature
C015_SLVSCG0.png
TJ = 25°C
Figure 16. Shutdown Supply Current vs Input Voltage
C017_SLVSCG0.png
TJ = 25°C
Figure 18. VIN Supply Current vs Input Voltage
C019_SLVSCG0.png
VIN = 5 V
Figure 20. PWRGD On-Resistance vs Temperature
C002_SLVSCG0.png
RT = 400 kΩ VIN = 5 V
Figure 3. Frequency vs Temperature
C004_SLVSCG0.png
VIN = 3.3 V
Figure 5. Voltage Reference vs Temperature
C006_SLVSCG0.png
Figure 7. Switching Frequency vs VSENSE
C008_SLVSCG0.png
VIN = 3.3 V
Figure 9. Transconductance (Slow Start) vs Junction Temperature
C010_SLVSCG0.png
VIN = 5 V VEN = Threshold +50 mV
Figure 11. EN Pin Current vs Temperature
C012_SLVSCG0.png
VIN = 5 V
Figure 13. Charge Current vs Temperature
C014_SLVSCG0.png
VIN = 3.3 V
Figure 15. Shutdown Supply Current vs Temperature
C016_SLVSCG0.png
VIN = 3.3 V
Figure 17. VIN Supply Current vs Junction Temperature
C018_SLVSCG0.png
Figure 19. PWRGD Threshold vs Temperature
C020_SLVSCG0.png
VIN = 5 V SS = 0.4 V
Figure 21. SS/TR to VSENSE Offset vs Temperature