ZHCSCL1A June   2014  – June 2014 TPS22962

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics, VBIAS = 5.0 V
    6. 7.6 Electrical Characteristics, VBIAS = 2.5 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 On/off Control
      2. 8.3.2 Input Capacitor (CIN)
      3. 8.3.3 Output Capacitor (CL)
      4. 8.3.4 VIN and VBIAS Voltage Range
    4. 8.4 Device Functional Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VIN to VOUT Voltage Drop
        2. 9.2.2.2 Inrush Current
        3. 9.2.2.3 Thermal Considerations
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Input voltage range –0.3 6 V
VBIAS Bias voltage range –0.3 6 V
VOUT Output voltage range –0.3 6 V
VON ON pin voltage range –0.3 6 V
IMAX Maximum Continuous Switch Current, TA = 70°C 10 A
IPLS Maximum Pulsed Switch Current, pulse < 300 µs, 2% duty cycle 12 A
TJ Maximum junction temperature 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 0 2 kV
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 0 1
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage range 0.8 VBIAS V
VBIAS Bias voltage range 2.5 5.5 V
VON ON voltage range 0 5.5 V
VOUT Output voltage range VIN V
VIH, ON High-level voltage, ON VBIAS = 2.5 V to 5.5 V 1.2 5.5 V
VIL, ON Low-level voltage, ON VBIAS = 2.5 V to 5.5 V 0 0.5 V
TA Operating free-air temperature range –40 85 °C
CIN Input Capacitor 1(1) µF
(1) Refer to Detailed Description section.

7.4 Thermal Information

THERMAL METRIC(1) TPS22962 UNIT
DNY
8 PINS
RθJA Junction-to-ambient thermal resistance 44.6 °C/W
RθJCtop Junction-to-case (top) thermal resistance 44.4
RθJB Junction-to-board thermal resistance 17.6
ψJT Junction-to-top characterization parameter 0.4
ψJB Junction-to-board characterization parameter 17.4
RθJCbot Junction-to-case (bottom) thermal resistance 1.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics, VBIAS = 5.0 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ 85°C (Full) and VBIAS = 5.0 V. Typical values are for TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
CURRENTS AND THRESHOLDS
IQ, VBIAS VBIAS quiescent current IOUT = 0, VIN = VBIAS,
VON = 5.0 V		 Full 20.4 26.0 µA
ISD, VBIAS VBIAS shutdown current VON = 0 V, VOUT = 0 V Full 1.1 1.5 µA
ISD, VIN VIN shutdown current VON = 0 V,
VOUT = 0 V		 VIN = 5.0 V Full 0.1 µA
VIN = 3.3 V 0.1
VIN = 1.8 V 0.1
VIN = 1.05 V 0.1
VIN = 0.8 V 0.1
ION ON pin leakage current VON = 5.5 V Full 0.1 µA
VHYS, ON ON pin hysteresis VBIAS = VIN 25°C 113 mV
RESISTANCE CHARACTERISTICS
RON On-state resistance IOUT = –200 mA,
VBIAS = 5.0 V		 VIN = 5.0 V 25°C 4.4 5.0 mΩ
Full 5.6
VIN = 3.3 V 25°C 4.4 5.0 mΩ
Full 5.6
VIN = 2.5 V 25°C 4.4 5.0 mΩ
Full 5.6
VIN = 1.8 V 25°C 4.4 5.0 mΩ
Full 5.6
VIN = 1.05 V 25°C 4.4 5.0 mΩ
Full 5.6
VIN = 0.8 V 25°C 4.4 5.0 mΩ
Full 5.6
RPD Output pulldown resistance VIN = 5.0 V, VON = 0 V, VOUT = 1 V Full 224 233 Ω

7.6 Electrical Characteristics, VBIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ 85°C (Full) and VBIAS = 2.5 V. Typical values are for TA = 25°C unless otherwise noted.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
CURRENTS AND THRESHOLDS
IQ, VBIAS VBIAS quiescent current IOUT = 0, VIN = VBIAS,
VON = 5.0 V		 Full 9.9 12.5 µA
ISD, VBIAS VBIAS shutdown current VON = 0 V, VOUT = 0 V Full 0.5 0.65 µA
ISD, VIN VIN shutdown current VON = 0 V,
VOUT = 0 V		 VIN = 2.5 V Full 0.1 µA
VIN = 1.8 V 0.1
VIN = 1.05 V 0.1
VIN = 0.8 V 0.1
ION ON pin input leakage current VON = 5.5 V Full 0.1 µA
VHYS, ON ON pin hysteresis VBIAS = VIN 25°C 83 mV
RESISTANCE CHARACTERISTICS
RON On-state resistance IOUT = –200 mA,
VBIAS = 2.5 V		 VIN =2.5 V 25°C 4.7 5.3 mΩ
Full 6.0
VIN =1.8 V 25°C 4.6 5.2 mΩ
Full 5.8
VIN =1.05 V 25°C 4.5 5.1 mΩ
Full 5.7
VIN = 0.8 V 25°C 4.5 5.1 mΩ
Full 5.7
RPD Output pulldown resistance VIN = 2.5 V, VON = 0 V, VOUT = 1 V Full 224 233 Ω

7.7 Switching Characteristics

Refer to the timing test circuit in Figure 1 (unless otherwise noted) for references to external components used for the test condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up sequence where VIN and VBIAS are already in steady state condition before the ON pin is asserted high.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = 5 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF 2397 µs
tOFF Turn-off time 4
tR VOUT rise time 2663
tF VOUT fall time 2
tD Delay time 1009
VIN = 3.3 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF 1811 µs
tOFF Turn-off time 4
tR VOUT rise time 1756
tF VOUT fall time 2
tD Delay time 897
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF 981 µs
tOFF Turn-off time 4
tR VOUT rise time 500
tF VOUT fall time 2
tD Delay time 714
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10Ω, CL = 0.1 µF 1576 µs
tOFF Turn-off time 8
tR VOUT rise time 1372
tF VOUT fall time 2
tD Delay time 865
VIN = 1.8V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF 1343 µs
tOFF Turn-off time 7
tR VOUT rise time 1006
tF VOUT fall time 2
tD Delay time 815
VIN = 0.8 V, VON = 5V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF 994 µs
tOFF Turn-off time 8
tR VOUT rise time 502
tF VOUT fall time 2
tD Delay time 723
tst_cir_slvscn3.gif
1. Rise and fall times of the control signal is 100ns.
Figure 1. Test Circuit
tim_wave_slvscn3.gifFigure 2. Timing Waveforms

7.8 Typical Characteristics

DG_001_SLVSCJ7.png
VIN = VBIAS VON = 5 V IOUT = 0 A
Figure 3. IQ,VBIAS vs VBIAS
DG_003_VB5V_SLVSCJ7.png
VBIAS = 5 V VON = 0 V VOUT = 0 V
Figure 5. ISD,VIN vs VIN
C006_SLVSCN3.png
VBIAS = 5 V VON = 5 V IOUT = –200 mA
Figure 7. RON vs Junction Temperature
DG_007_SLVSCJ7.png
VBIAS = 5 V VON = 5 V IOUT = –200 mA
Figure 9. RON vs VIN
DG_016_SLVSCJ7.png
VON = 0 V VIN = 1.05 V VOUT = 1 V
Figure 11. RPD vs VBIAS
C001_SLVSCN2.png
VBIAS = 5 V VON = 5 V IOUT = –10 A
Figure 13. RON vs VIN at 10A load
C010_SLVSCN2.png
VBIAS = 5 V VON = 5 V TA = 25°C
Figure 15. RON vs IOUT
DG_017_VIL_SLVSCJ7.png
VIN = VBIAS IOUT = 0 A
Figure 17. VIL,ON vs VBIAS
DG_018_SLVSCJ7.png
VBIAS = 2.5 V RL = 10 Ω CL = 0.1 µF
Figure 19. tD vs VIN
DG_020_SLVSCJ7.png
VBIAS = 2.5 V RL = 10 Ω CL = 0.1 µF
Figure 21. tF vs VIN
DG_022_SLVSCJ7.png
VBIAS = 2.5 V RL = 10 Ω CL = 0.1 µF
Figure 23. tOFF vs VIN
DG_025_SLVSCJ7.png
VBIAS = 2.5 V RL = 10 Ω CL = 0.1 µF
Figure 25. tON vs VIN
DG_027_SLVSCJ7.png
VBIAS = 2.5 V RL = 10 Ω CL = 0.1 µF
Figure 27. tR vs VIN
DG_023_SLVSCJ7.png
TA = 25°C RL = 10 Ω CL = 0.1 µF
Figure 29. tR vs VIN for Various VBIAS
DG_002_SLVSCJ7.png
VIN = VBIAS VON = 0 V VOUT = 0 V
Figure 4. ISD,VBIAS vs VBIAS
C011_SLVSCN3.png
VBIAS = 2.5 V VON = 5 V IOUT = –200 mA
Figure 6. RON vs Junction Temperature
DG_006_SLVSCJ7.png
VBIAS = 2.5 V VON = 5 V IOUT = –200 mA
Figure 8. RON vs VIN
DG_012_SLVSCJ7.png
TA = 25°C VON = 5 V IOUT = –200 mA
Figure 10. RON vs VIN
C002_SLVSCN2.png
VBIAS = 2.5 V VON = 5 V IOUT = –10 A
Figure 12. RON vs VIN at 10A load
C008_SLVSCN2.png
VBIAS = 2.5 V VON = 5 V TA = 25°C
Figure 14. RON vs IOUT
DG_017_VHYST_SLVSCJ7.png
VIN = VBIAS
Figure 16. VHYS vs VBIAS
DG_017_VIH_SLVSCJ7.png
VIN = VBIAS IOUT = 0 A
Figure 18. VIH,ON vs VBIAS
DG_019_SLVSCJ7.png
VBIAS = 5 V RL = 10 Ω CL = 0.1 µF
Figure 20. tD vs VIN
DG_021_SLVSCJ7.png
VBIAS = 5 V RL = 10 Ω CL = 0.1 µF
Figure 22. tF vs VIN
DG_024_SLVSCJ7.png
VBIAS = 5 V RL = 10 Ω CL = 0.1 µF
Figure 24. tOFF vs VIN
DG_026_SLVSCJ7.png
VBIAS = 5 V RL = 10 Ω CL = 0.1 µF
Figure 26. tON vs VIN
DG_028_SLVSCJ7.png
VBIAS = 5 V RL = 10 Ω CL = 0.1 µF
Figure 28. tR vs VIN
DG_030_SLVSCJ7.png
TA = 25°C RL = 10 Ω CL = 0.1 µF
Figure 30. tR vs VBIAS for Various VIN