ZHCSDK9A March   2015  – April 2015 TPS22953 , TPS22954

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 简化电路原理图
  5. 修订历史记录
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Thermal Information
    5. 8.5  Electrical Characteristics
    6. 8.6  Electrical Characteristics, VBIAS = 5 V
    7. 8.7  Electrical Characteristics, VBIAS = 3.3 V
    8. 8.8  Electrical Characteristics, VBIAS = 2.5 V
    9. 8.9  Switching Characteristics, CT = 1000 pF
    10. 8.10 Switching Characteristics, CT = 0 pF
    11. 8.11 Typical DC Characteristics
    12. 8.12 Typical Switching Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 On/Off Control (EN pin)
      2. 9.3.2 Voltage Monitoring (SNS pin)
      3. 9.3.3 Power Good (PG Pin)
      4. 9.3.4 Supervisor Fault Detection and Automatic Restart
      5. 9.3.5 Manual Restart
      6. 9.3.6 Thermal Shutdown
      7. 9.3.7 Quick Output Discharge (QOD) (TPS22954 Only)
      8. 9.3.8 VIN and VBIAS Voltage Range
      9. 9.3.9 Adjustable Rise Time (CT pin)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Input to OutputVoltage Drop
      2. 10.1.2 Thermal Considerations
      3. 10.1.3 Automatic Power Sequencing
      4. 10.1.4 Monitoring a Downstream Voltage
        1. 10.1.4.1 Monitoring the Input Voltage
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 相关链接
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

10.1 Application Information

This section will highlight some of the design considerations when implementing this device in various applications. A PSPICE model for this device is also available on www.ti.com for further aid.

10.1.1 Input to OutputVoltage Drop

The input to output voltage drop in the device is determined by the RON of the device and the load current. The RON of the device depends upon the VIN and VBIAS conditions of the device. Refer to the RON specification of the device in the Electrical Characteristics table of this datasheet. Once the RON of the device is determined based upon the VIN and VBIAS voltage conditions, use Equation 5 to calculate the input to output voltage drop:

Equation 5. TPS22954 TPS22953 Eq05_delta_slvsct5.gif

Where:

ΔV = voltage drop from IN to OUT
ILOAD = load current
RON = On-Resistance of the device for a specific VIN and VBIAS

An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.

10.1.2 Thermal Considerations

The maximum IC junction temperature should be restricted to just under the thermal shutdown (TSD) limit of the device. To calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use Equation 6.

Equation 6. TPS22954 TPS22953 Eq07_PDmax_slvsct5.gif

Where:

PD(max) = maximum allowable power dissipation
TJ(max) = maximum allowable junction temperature before hitting thermal shutdown (see Electrical Characteristics table)
TA = ambient temperature of the device
θJA = junction to air thermal impedance. See Thermal Information section. This parameter is highly dependent upon board layout.

10.1.3 Automatic Power Sequencing

The PG pin of the TPS22953/54 allows for automatic sequencing of multiple system rails or loads. The accurate SNS voltage monitoring will ensure the first rail is up before the next starts to turn on. This approach provides robust system sequencing and reduces the total inrush current by preventing overlap. The example shows how two rails can be sequenced. There is no limit to the number of rails that can be sequenced in this way

TPS22954 TPS22953 Power_Sequencing.gifFigure 55. Power Sequencing with PG Control

10.1.4 Monitoring a Downstream Voltage

The SNS pin can be used to monitor other system voltages in addition to VOUT. The status of the monitored voltage will be indicated by the PG pin which can be pulled up to VOUT or another voltage. The figure below shows an example of the TPS22953/54 monitoring the output of a downstream DC/DC regulator. In this case, the switch will turn on when the power supply is above the UVLO, but the PG will not be asserted until the DC/DC regulator has started up.

TPS22954 TPS22953 Monitor_Downstream.gifFigure 56. Monitoring a Downstream Voltage

In this application, if the DC/DC Regulator is shut down, the supervisor will register this as a fault case and reset the load switch.

10.1.4.1 Monitoring the Input Voltage

The SNS pin can also be used to monitor VIN in the case a MCU GPIO is being used to control the EN. This will allow PG to report on the status of the input voltage when the switch is enabled.

TPS22954 TPS22953 Monitoring_VIN.gifFigure 57. Monitoring Input Voltage

10.2 Typical Application

This application demonstrates how the TPS22953/54 can use used to limit inrush current to output capacitance.

TPS22954 TPS22953 Typical_Application.gifFigure 58. Typical Application Schematic for Powering a Downstream Module

10.2.1 Design Requirements

For this design example, use the following as the input parameters.

Table 1. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
VIN 3.3 V
VBIAS 5.0 V
CL 47 µF
Maximum Acceptable Inrush Current 150mA
RL None

10.2.2 Detailed Design Procedure

To begin the design process, the designer needs to know the following:

  • Input voltage
  • BIAS voltage
  • Load current
  • Load capacitance
  • Maximum acceptable inrush current

10.2.2.1 Inrush Current

To determine how much inrush current will be caused by the CL capacitor, use Equation 7:

Equation 7. TPS22954 TPS22953 Eq06_iinrush_slvsct5.gif

Where:

IINRUSH = amount of inrush caused by CL
CL = capacitance on VOUT
dt = VOUT Rise Time (typically 10% to 90%)
dVOUT = Change in VOUT Voltage (typically 10% to 90%)

In this case, a Slew Rate slower than 314μs/V will be required to meet the maximum acceptable inrush requirement. Equation 4 can be used to estimate the CT capacitance required for this slew rate.

Equation 8. 314 μs/V = 0.35 × CT + 20
Equation 9. CT = 840 pF

10.2.3 Application Curves

The following Application Curves show the inrush with multiple different CT values. These curves show only a CT capacitance greater than 840pF results in the acceptable inrush current of 150mA.

TPS22954 TPS22953 SC_009tek0110.png
CT = 0 pF
Figure 59. Inrush with CT = 0 pF
TPS22954 TPS22953 SC_011tek0112.png
CT = 470 pF
Figure 61. Inrush with CT = 470 pF
TPS22954 TPS22953 SC_013tek0114.png
CT = 2200 pF
Figure 63. Inrush with CT = 2200 pF
TPS22954 TPS22953 SC_010tek0111.png
CT = 220 pF
Figure 60. Inrush with CT = 220 pF
TPS22954 TPS22953 SC_012tek0113.png
CT = 1000 pF
Figure 62. Inrush with CT = 1000 pF