ZHCSCE8F April   2014  – May 2019

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      TPD1S514 系列电路保护方案
      2.      TPD1S514 系列方框图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Consumption
    6. 7.6  Electrical Characteristics EN Pin
    7. 7.7  Thermal Shutdown Feature
    8. 7.8  Electrical Characteristics nFET Switch
    9. 7.9  Electrical Characteristics OVP Circuit
    10. 7.10 Electrical Characteristics VBUS_POWER Circuit
    11. 7.11 Timing Requirements
    12. 7.12 TPD1S514-1 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Over Voltage Protection on VBUS_CON up to 30 V DC
      2. 8.3.2  Precision OVP (< ±1% Tolerance)
      3. 8.3.3  Low RON nFET Switch Supports Host and Charging Mode
      4. 8.3.4  VBUS_POWER, TPD1S514-1, TPD1S514-2, TPD1S514-3
      5. 8.3.5  VBUS_POWER, TPD1S514
      6. 8.3.6  Powering the System When Battery is Discharged
      7. 8.3.7  ±15 kV IEC 61000-4-2 Level 4 ESD Protection
      8. 8.3.8  100 V IEC 61000-4-5 µs Surge Protection
      9. 8.3.9  Startup and OVP Recovery Delay
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VBUS_CON < 3.5 V (Minimum VBUS_CON)
      2. 8.4.2 Operation With VBUS_CON > VOVP
      3. 8.4.3 OTG Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPD1S514-1 USB 2.0/3.0 Case 1: Always Enabled
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 VBUS Voltage Range
          2. 9.2.1.2.2 Discharged Battery
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TPD1S514-1 USB 2.0/3.0 Case 2: PMIC Controlled EN
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 VBUS Voltage Range
          2. 9.2.2.2.2 PMIC Power Requirement
          3. 9.2.2.2.3 Discharged Battery
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 社区资源
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YZ|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VBUS_CON Supply voltage from USB connector –0.3 30 V
VBUS_SYS Internal Supply DC voltage Rail on the PCB –0.3 20 V
IBUS Continuous input current on VBUS_CON pin(3) 3.5 A
IOUT Continuous output current on VBUS_CON pin(3) 3.5 A
IPEAK Peak Input and Output Current on VBUS_CON, VBUS_SYS pin (10 ms) 8 A
IDIODE Continuous forward current through the FET body diode 1 A
IPOWER Continuous current through VBUS_POWER 10 mA
VEN Voltage on Input pin (EN) 7 V
VBUS_POWER Continuous Voltage at VBUS_POWER TPD1S514-1 See(4) V
TPD1S514-2 See(4)
TPD1S514-3 See(4)
TPD1S514 See(4)
IEC 61000-4-5 open circuit voltage (tp = 1.2/50 µs) VBUS_CON pin 100 V
IEC 61000-4-5 peak pulse current (tp = 8/20μs) VBUS_CON pin 30 A
IEC 61000-4-5 peak pulse power (tp = 8/20μs) VBUS_CON pin 900 W
CLOAD Output load capacitance VBUS_SYS pin 0.1 100 µF
CCON Input capacitance VBUS_CON pin 0.1 50 µF
CPOW VBUS_POWER capacitance VBUS_POWER pin 0.1 4.7 µF
TA Operating free air temperature –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) Thermal limits and power dissipation limits must be observed.
(4) 6.9 V or VBUS_CON + 0.3 V, whichever is smaller.