ZHCSNE3 June   2021 TLIN2022A-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 说明（续）
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings - IEC
    4. 7.4 Thermal Information
    5. 7.5 Recommended Operating Conditions
    6. 7.6 Electrical Characteristics
    7. 7.7 Duty Cycle Characteristics
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  LIN (Local Interconnect Network) Bus
        1. 9.3.1.1 LIN Transmitter Characteristics
        2. 9.3.1.2 LIN Receiver Characteristics
          1. 9.3.1.2.1 Termination
      2. 9.3.2  TXD
      3. 9.3.3  RXD (Receive Output)
      4. 9.3.4  VSUP (Supply Voltage)
      5. 9.3.5  GND (Ground)
      6. 9.3.6  EN (Enable Input)
      7. 9.3.7  Protection Features
      8. 9.3.8  TXD Dominant Time Out (DTO)
      9. 9.3.9  Bus Stuck Dominant System Fault: False Wake-Up Lockout
      10. 9.3.10 Thermal Shutdown
      11. 9.3.11 Undervoltage on VSUP
      12. 9.3.12 Unpowered Device and LIN Bus
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Sleep Mode
      3. 9.4.3 Standby Mode
      4. 9.4.4 Wake-Up Events
        1. 9.4.4.1 Wake-Up Request (RXD)
        2. 9.4.4.2 Mode Transitions
  10. 10Application Information Disclaimer
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedures
        1. 10.2.2.1 Normal Mode Application Note
        2. 10.2.2.2 Standby Mode Application Note
        3. 10.2.2.3 TXD Dominant State Timeout Application Note
      3. 10.2.3 Application Curves
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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7.6 Electrical Characteristics

parameters valid across -40℃ ≤ TA ≤ 125℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Power Supply
VSUP Operational supply voltage (ISO/DIS 17987 Param 10, 53) Device is operational beyond the LIN defined nominal supply voltage range See Figure 8-1 and Figure 8-2 4 48 V
VSUP Nominal supply voltage (ISO/DIS 17987
Param 10, 53)
 		 Normal and Standby Modes: ramp VSUP while LIN signal is a 10 kHZ square wave with 50 % duty cycle and 36V swing. See Figure 8-1 and Figure 8-2 4   48 V
Sleep Mode 4   48 V
UVSUP Undervoltage VSUP threshold 2.9 3.85 V
UVHYS Delta hysteresis voltage for VSUP undervoltage threshold 0.2 V
ISUP Supply current Normal Mode: EN = High, bus dominant: total bus load where RLIN > 500 Ω and CLIN < 10 nF 1.2 8.5 mA
Standby Mode: EN = Low, bus dominant: total bus load where RLIN > 500 Ω and CLIN < 10 nF  1.1 3.75 mA
ISUP Supply current Normal Mode: EN = High, Bus Recessive: LIN = VSUP   670 1600 µA
Standby Mode: EN = Low, Bus Recessive LIN = VSUP   20 40 µA
Sleep Mode: 4.0 V < VSUP < 14 V, LIN = VSUP, EN = 0 V, TXD and RXD Floating   10 20 µA
Sleep Mode: 14 V < VSUP < 36 V, LIN = VSUP, EN = 0 V, TXD and RXD floating     30 µA
RXD1/RXD2 OUTPUT PIN (OPEN DRAIN)
VOL Output Low voltage Based upon external pull-up to VCC  (4) 0.6 V
IOL Low-level output current, open-drain LIN = 0 V, RXD = 0.4 V 1.5 mA
IILG Leakage current, high-level LIN = VSUP, RXD = 5 V –5 0 5 µA
TXD1/TXD2 INPUT PIN
VIL Low-level input voltage –0.3 0.8 V
VIH High-level input voltage 2 5.25 V
VHYS Input threshold voltage, normal modes& selective wake modes 50 500 mV
IILG Low-level input leakage current TXD = Low –5 0 5 µA
RTXD Internal pull-down resitor value 125 350 800 kΩ
EN1/EN2 INPUT PIN
VIL Low-level input voltage –0.3 0.8 V
VIH High-level input voltage 2 5.25 V
VHYS Hysteresis voltage By design and characterization 50 500 mV
IILG Low-level input current EN = Low –5 0 5 µA
REN Internal pull-down resistor 125 350 800 kΩ
LIN1/LIN2 PIN
VOH HIGH level output voltage (3) LIN recessive, TXD = high, IO = 0 mA, 7 V ≤ VSUP ≤ 48 V 0.85 VSUP
VOH LIN recessive high-level output voltage (1) (2) TXD = high, IO = 0 mA, 7 V ≤ VSUP ≤ 18 V 0.8 VSUP
VOH HIGH level output voltage(3) LIN recessive, TXD = high, IO = 0 mA,  4 V ≤ VSUP < 7 V 3 V
VOL LOW level output voltage(3) LIN dominant, TXD = low, 7 V ≤ VSUP ≤ 48 V 0.2 VSUP
VOL LIN dominant low- level output voltage (1) (2) TXD = low, 7 V ≤ VSUP ≤ 18 V 0.2 VSUP
VOL LOW level output voltage(3) LIN dominant, TXD = low,  4 V ≤ VSUP < 7 V 1.2 V
VSUP_NON_OP VSUP where impact of recessive LIN bus < 5% (ISO/DIS 17987 Param 56) TXD & RXD open LIN = 4 V to 58 V –0.3 58 V
IBUS_LIM Limiting current (ISO/DIS 17987 Param 57) TXD = 0 V, VLIN = 48 V, RMEAS = 440 Ω, VSUP = 48 V, VBUSdom < 4.518 V  75 120 300 mA
IBUS_PAS_dom Receiver leakage current, dominant (ISO/DIS 17987 Param 58) LIN = 0 V, VSUP = 24 V Driver off/recessive; See Figure 8-6 –2 mA
IBUS_PAS_rec1 Receiver leakage current, recessive (ISO/DIS 17987 Param 59) LIN > VSUP, 8 V ≤ VSUP ≤ 48 V Driver off; See Figure 8-7 20 µA
IBUS_PAS_rec2 Receiver leakage current, recessive (ISO/DIS 17987 Param 59) LIN = VSUP, Driver off; See Figure 8-7 –5 5 µA
IBUS_NO_GND Leakage current, loss of ground (ISO/DIS 17987 Param 60) GND = VSUP, 0 V ≤ VLIN = 36 V, VSUP = 24 V; See Figure 8-8 –2 2 mA
Ileak gnd(dom) Leakage current, loss of ground (5) VSUP = 8 V, GND = open, VSUP = 18 V,
GND = open
RCommander = 1 kΩ, CL = 1 nF
RResponder = 20 kΩ, CL = 1 nF
LIN = dominant		 -1 1 mA
Ileak gnd(rec) Leakage current, loss of ground (5) VSUP = 8 V, GND = open, VSUP = 18 V,
GND = open
RCommander = 1 kΩ, CL = 1 nF
RResponder = 20 kΩ, CL = 1 nF
LIN = recessive		 -100 100 µA
IBUS_NO_BAT Leakage current, loss of supply (ISO/DIS 17987 Param 61) 0 V ≤ VLIN ≤ 48 V, VSUP = GND; See Figure 8-9 5 µA
VBUSdom Low-level input voltage (ISO/DIS 17987 Param , 62) LIN dominant (including LIN dominant for wake up); See Figure 8-3 and Figure 8-4 0.4 VSUP
VBUSrec High-level input voltage (ISO/DIS 17987 Param , 63) LIN recessive; See Figure 8-3 and Figure 8-4 0.6 VSUP
VIH LIN recessive high-level input voltage (1) (2) 7 V ≤ VSUP ≤ 18 V 0.47 0.6 VSUP
VIL LIN dominant low-level input voltage (1) (2) 7 V ≤ VSUP ≤ 18 V 0.4 0.53 VSUP
VBUS_CNT Receiver center threshold (ISO/DIS 17987 Param , 64) VBUS_CNT = ( VBUSdom + VBUSrec )/2; See Figure 8-3 and Figure 8-4 0.475 0.5 0.525 VSUP
VHYS Hysteresis voltage (ISO/DIS 17987 Param , 65) VHYS = (VBUSrec - VBUSdom); See Figure 8-3 and Figure 8-4 0.175 VSUP
VHYS Hysteresis voltage (SAE J2602) VHYS = VIH - VIL ; See Figure 8-3 and Figure 8-4 0.07 0.175 VSUP
VSERIAL_DIODE Serial diode LIN termination pullup path  (ISO/DIS 17987 Param , 66) ISERIAL_DIODE = 10 μA 0.4 0.7 1 V
RPU Pull-up resistor to VSUP (ISO/DIS 17987 Param , 71) Normal and Standby modes 20 45 60 kΩ
IRSLEEP Pull-up current source to VSUP Sleep mode, VSUP = 27 V, LIN = GND –20 –2 µA
CLINPIN Capacitance of the LIN pin VSUP = 14 V 25 pF
(1) SAE 2602 commander node load conditions: 5.5 nF/4 kΩ and 899 pF/20 kΩ
(2) SAE 2602 responder node load conditions: 5.5 nF/875 Ω and 899 pF/900 Ω
(3) ISO 17987 bus load conditions (CLINBUS, RLINBUS) include 1 nF/1 kΩ; 6.8 nF/660 Ω; 10 nF/500 Ω.
(4) RXD uses open drain output structure therefore VOL level is based upon microcontroller supply voltage VCC.
(5) Ileak gnd = (VBAT - VLIN)/RLoad