ZHCSFG5A September   2016  – November 2016 SN65HVD233-Q1 , SN65HVD234-Q1 , SN65HVD235-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Thermal Information
    5. 8.5  Electrical Characteristics: Driver
    6. 8.6  Electrical Characteristics: Receiver
    7. 8.7  Switching Characteristics: Driver
    8. 8.8  Switching Characteristics: Receiver
    9. 8.9  Switching Characteristics: Device
    10. 8.10 Typical Characteristics
  9. 9 Parameter Measurement Information
  10. 10Detailed Description
    1. 10.1 Overview
    2. 10.2 Functional Block Diagrams
    3. 10.3 Feature Description
      1. 10.3.1 Diagnostic Loopback (SN65HVD233-Q1)
      2. 10.3.2 Autobaud Loopback (SN65HVD235-Q1)
      3. 10.3.3 Slope Control
      4. 10.3.4 Standby
      5. 10.3.5 Thermal Shutdown
    4. 10.4 Device Functional Modes
  11. 11Application and Implementation
    1. 11.1 Application Information
    2. 11.2 Typical Application
      1. 11.2.1 Design Requirements
        1. 11.2.1.1 Bus Loading, Length and Number of Nodes
        2. 11.2.1.2 CAN Termination
      2. 11.2.2 Detailed Design Procedure
      3. 11.2.3 Application Curve
    3. 11.3 System Example
      1. 11.3.1 ISO 11898 Compliance of SN65HVD23x-Q1 Family of 3.3-V CAN Transceivers
        1. 11.3.1.1 Introduction
        2. 11.3.1.2 Differential Signal
        3. 11.3.1.3 Common-Mode Signal
        4. 11.3.1.4 Interoperability of 3.3-V CAN in 5-V CAN Systems
  12. 12Power Supply Recommendations
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14器件和文档支持
    1. 14.1 相关链接
    2. 14.2 接收文档更新通知
    3. 14.3 社区资源
    4. 14.4 商标
    5. 14.5 静电放电警告
    6. 14.6 Glossary
  15. 15机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

over operating ambient temperature range unless otherwise noted(1)(2)
MIN MAX UNIT
VCC Supply voltage –0.3 7 V
Voltage at any bus terminal (CANH or CANL) –36 36 V
Voltage input, transient pulse, CANH and CANL, through 100 Ω (see Figure 18) –100 100 V
VI Input voltage, (AB, EN, LBK, RS, TXD) –0.5 7 V
VO Output voltage (RXD) –0.5 7 V
IO Receiver output current –10 10 mA
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to the network ground pin.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) CANH, CANL to GND ±12 000 V
Between CANH and CANL ±16 000
All pins ±3 000
Charged-device model (CDM), per AEC Q100-011 ±1 000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

8.3 Recommended Operating Conditions

MIN MAX UNIT
VCC Supply voltage 3 3.6 V
Voltage at any bus terminal (separately or common mode) –7 12 V
VIH High-level input voltage EN, AB, LBK, TXD 2 5.5 V
VIL Low-level input voltage EN, AB, LBK, TXD 0 0.8 V
VID Differential input voltage between CANH and CANL –6 6 V
Resistance from RS to ground 0 100 kΩ
VI(Rs) Input voltage at RS for standby 0.75 VCC 5.5 V
IOH High-level output current Driver –50 mA
Receiver –10
IOL Low-level output current Driver 50 mA
Receiver 10
TA Operating ambient temperature(1) –40 125 °C
(1) Maximum ambient temperature operation is allowed as long as the device maximum junction temperature is not exceeded.

8.4 Thermal Information

THERMAL METRIC(1) SN65HVD23x-Q1 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 102.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 45.1 °C/W
RθJB Junction-to-board thermal resistance 43.8 °C/W
ψJT Junction-to-top characterization parameter 7.3 °C/W
ψJB Junction-to-board characterization parameter 43.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics: Driver

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VO(D) Bus output voltage (dominant) CANH TXD at 0 V, RS at 0 V, see Figure 12 and Figure 13 2.45 VCC V
CANL 0.5 1.25
VO Bus output voltage (recessive) CANH TXD at 3 V, RS at 0 V, see Figure 12 and Figure 13 2.3 V
CANL 2.3
VOD(D) Differential output voltage (dominant) TXD at 0 V, RS at 0 V, see Figure 12 and Figure 13 1.5 2 3 V
TXD at 0 V, RS at 0 V, see Figure 13 and Figure 14 1.2 2 3
VOD Differential output voltage (recessive) TXD at 3 V, RS at 0 V, see Figure 12 and Figure 13 –120 12 mV
TXD at 3 V, RS at 0 V, no load –0.5 0.05 V
VOC(pp) Peak-to-peak common-mode output voltage See Figure 21 1 V
IIH High-level input current AB, EN, LBK, TXD TXD = 2 V or EN = 2 V or LBK = 2 V or AB = 2 V –30 30 μA
IIL Low-level input current AB, EN, LBK, TXD TXD = 0.8 V or EN = 0.8 V or LBK = 0.8 V or AB = 0.8 V –30 30 μA
IOS Short-circuit output current VCANH = –7 V, CANL open, see Figure 26 –250 mA
VCANH = 12 V, CANL open, see Figure 26 1
VCANL = –7 V, CANH open, see Figure 26 –1
VCANL = 12 V, CANH open, see Figure 26 250
CO Output capacitance See CI, Input capacitance in Electrical Characteristics: Receiver
IIRs(s) RS input current for standby RS at 0.75 VCC –10 μA
ICC Supply current Sleep EN at 0 V, TXD at VCC, RS at 0 V or VCC 0.05 2 μA
Standby RS at VCC, TXD at VCC, AB at 0 V, LBK at 0 V,
EN at VCC 		200 600
Dominant TXD at 0 V, no load, AB at 0 V, LBK at 0 V,
RS at 0 V, EN at VCC 		6 mA
Recessive TXD at VCC, no load, AB at 0 V, LBK at 0 V,
RS at 0 V, EN at VCC 		6
P(AVG) Average power dissipation RL = 60 Ω, RS at 0 V, input to D a 1-MHz 50% duty
cycle square wave VCC at 3.3 V, TA = 25°C		 36.4 mW
(1) All typical values are at 25°C and with a 3.3-V supply.

8.6 Electrical Characteristics: Receiver

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VIT+ Positive-going input threshold voltage AB at 0 V, LBK at 0 V, EN at VCC, see Table 1 750 900 mV
VIT– Negative-going input threshold voltage 500 650 mV
Vhys Hysteresis voltage (VIT+ – VIT–) 100 mV
VOH High-level output voltage IO = –4 mA, See Figure 17 0.8 × VCC V
VOL Low-level output voltage IO = 4 mA, See Figure 17 0.4 V
II Bus input current CANH or CANL at 12 V Other bus pin at 0 V,
TXD at 3 V, AB at 0 V,
LBK at 0 V, RS at 0 V,
EN at VCC 		150 500 μA
CANH or CANL at 12 V,
VCC at 0 V		 200 600
CANH or CANL at –7 V –610 –150
CANH or CANL at –7 V,
VCC at 0 V		 –450 –130
CI Input capacitance (CANH or CANL) Pin-to-ground, VI = 0.4 sin (4E6πt) + 0.5 V, TXD at 3 V,
AB at 0 V, LBK at 0 V, EN at VCC 		40 pF
CID Differential input capacitance Pin-to-pin, VI = 0.4 sin (4E6πt) + 0.5 V, TXD at 3 V,
AB at 0 V, LBK at 0 V, EN at VCC 		20 pF
RID Differential input resistance TXD at 3 V, AB at 0 V, LBK at 0 V, EN at VCC 40 100 kΩ
RIN Input resistance (CANH or CANL) to ground 20 50 kΩ
ICC Supply current Sleep EN at 0 V, TXD at VCC, RS at 0 V or VCC 0.05 2 μA
Standby RS at VCC, TXD at VCC, AB at 0 V, LBK at 0 V, EN at VCC 200 600
Dominant TXD at 0 V, no load, RS at 0 V, LBK at 0 V, AB at 0 V,
EN at VCC 		6 mA
Recessive TXD at VCC, no load, RS at 0 V, LBK at 0 V, AB at 0 V,
EN at VCC 		6
(1) All typical values are at 25°C and with a 3.3-V supply.

8.7 Switching Characteristics: Driver

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Propagation delay time,
low-to-high-level output		 RS at 0 V, see Figure 15 35 85 ns
RS with 10 kΩ to ground, see Figure 15 70 125
RS with 100 kΩ to ground, see Figure 15 500 870
tPHL Propagation delay time,
high-to-low-level output		 RS at 0 V, see Figure 15 70 120 ns
RS with 10 kΩ to ground, see Figure 15 130 180
RS with 100 kΩ to ground, see Figure 15 870 1200
tsk(p) Pulse skew (|tPHL – tPLH|) RS at 0 V, see Figure 15 35 ns
RS with 10 kΩ to ground, see Figure 15 60
RS with 100 kΩ to ground, see Figure 15 370
tr Differential output signal rise time RS at 0 V, see Figure 15 20 70 ns
RS with 10 kΩ to ground, see Figure 15 30 135
RS with 100 kΩ to ground, see Figure 15 350 1400
tf Differential output signal fall time RS at 0 V, see Figure 15 20 70 ns
RS with 10 kΩ to ground, see Figure 15 30 135
RS with 100 kΩ to ground, see Figure 15 350 1400
ten(s) Enable time from standby to dominant See Figure 19 and Figure 20 0.6 1.5 μs
ten(z) Enable time from sleep to dominant 1 5 μs
(1) All typical values are at 25°C and with a 3.3-V supply.

8.8 Switching Characteristics: Receiver

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Propagation delay time, CANH input low to RXD output high See Figure 17 35 60 ns
tPHL Propagation delay time, CANH input high to RXD output low 35 60 ns
tsk(p) Pulse skew (|tPHL – tPLH|) 7 ns
tr Output signal rise time 2 5 ns
tf Output signal fall time 2 5 ns
(1) All typical values are at 25°C and with a 3.3-V supply.

8.9 Switching Characteristics: Device

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
t(LBK) Loopback delay, driver input to receiver output 'HVD233-Q1 See Figure 23 7.5 12 ns
t(AB1) Loopback delay, driver input to receiver output 'HVD235-Q1 See Figure 24 10 20 ns
t(AB2) Loopback delay, bus input to
receiver output		 See Figure 25 35 60 ns
t(loop1) Total loop delay, driver input to receiver output, recessive to dominant RS at 0 V, see Figure 22 70 135 ns
RS with 10 kΩ to ground, see Figure 22 105 190
RS with 100 kΩ to ground, see Figure 22 535 1000
t(loop2) Total loop delay, driver input to receiver output, dominant to recessive RS at 0 V, see Figure 22 70 135 ns
RS with 10 kΩ to ground, see Figure 22 105 190
RS with 100 kΩ to ground, see Figure 22 535 1000
(1) All typical values are at 25°C and with a 3.3-V supply.

8.10 Typical Characteristics

RS = LBK = AB = 0 V; EN = VCC
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D001_SLLSES4.gif
Figure 1. Recessive-to-Dominant Loop Time vs Ambient Temperature
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D003_SLLSES4.gif
VCC = 3.3 V TA = 25°C RL = 60-Ω Load
Figure 3. Supply Current vs Frequency
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D005_SLLSES4.gif
VCC = 3.3 V TA = 25°C
Figure 5. Driver High-Level Output Current vs High-Level Output Voltage
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D007_SLLSES4.gif
See Figure 3
Figure 7. Receiver Low-to-High Propagation Delay vs Ambient Temperature
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D009_SLLSES4.gif
See Figure 1
Figure 9. Driver Low-to-High Propagation Delay vs Ambient Temperature
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D011_SLLSES4.gif
TA = 25°C RL = 60 Ω
Figure 11. Driver Output Current vs Supply Voltage
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D002_SLLSES4.gif
Figure 2. Dominant-to-Recessive Loop Time vs Ambient Temperature
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D004_SLLSES4.gif
VCC = 3.3 V TA = 25°C
Figure 4. Driver Low-Level Output Current vs Low-Level Output Voltage
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D006_SLLSES4.gif
RL = 60 Ω
Figure 6. Differential Output Voltage vs Ambient Temperature
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D008_SLLSES4.gif
See Figure 3
Figure 8. Receiver High-to-Low Propagation Delay vs Ambient Temperature
SN65HVD233-Q1 SN65HVD234-Q1 SN65HVD235-Q1 D010_SLLSES4.gif
See Figure 1
Figure 10. Driver High-to-Low Propagation Delay vs Ambient Temperature