ZHCSDY9A June   2015  – July 2015 DRV8881

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1  Motor Driver Current Ratings
        1. 7.3.1.1 Peak Current Rating
        2. 7.3.1.2 RMS Current Rating
        3. 7.3.1.3 Full-Scale Current Rating
      2. 7.3.2  PWM Motor Drivers
      3. 7.3.3  Bridge Control
      4. 7.3.4  Current Regulation
      5. 7.3.5  Decay Modes
        1. 7.3.5.1 Mode 1: Slow Decay
        2. 7.3.5.2 Mode 2: Fast Decay
        3. 7.3.5.3 Mode 3: 30%/70% Mixed Decay
      6. 7.3.6  AutoTune
      7. 7.3.7  Adaptive Blanking Time
      8. 7.3.8  Parallel Mode
      9. 7.3.9  Charge Pump
      10. 7.3.10 LDO Voltage Regulator
      11. 7.3.11 Logic and Tri-Level Pin Diagrams
      12. 7.3.12 Protection Circuits
        1. 7.3.12.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.12.2 VCP UVLO (CPUV)
        3. 7.3.12.3 Overcurrent Protection (OCP)
        4. 7.3.12.4 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 DRV8881P Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Current Regulation
          2. 8.2.1.2.2 Stepper Motor Speed
          3. 8.2.1.2.3 Decay Modes
          4. 8.2.1.2.4 Sense Resistor
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Alternate Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Current Regulation
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1)
MIN MAX UNIT
Power supply voltage (VM) –0.3 50 V
Power supply voltage ramp rate (VM) 0 2 V/µs
Charge pump voltage (VCP, CPH) –0.3 VM + 12 V
Charge pump negative switching pin (CPL) –0.3 VM V
Internal regulator voltage (V3P3) –0.3 3.8 V
Internal regulator current output (V3P3) 0 10 mA
Control pin voltage (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT, ADECAY, BDECAY, TRQ0, TRQ1, ATE, PARA) –0.3 7.0 V
Open drain output current (nFAULT) 0 10 mA
Reference input pin voltage (AVREF, BVREF) –0.3 V3P3 + 0.5 V
Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –0.7 VM + 0.7 V
Continuous shunt amplifier input pin voltage (AISEN, BISEN) (2) –0.55 0.55 V
Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2, AISEN, BISEN) Internally limited A
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Transients of ±1 V for less than 25 ns are acceptable

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VM Power supply voltage range 6.5 45 V
VIN Digital pin voltage range 0 5.3 V
VREF Reference rms voltage range (AVREF, BVREF) 0.3 (1) V3P3 V
ƒPWM Applied PWM signal (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2) 0 100 kHz
IV3P3 V3P3 external load current 0 10 (2) mA
Irms Motor rms current per H-bridge 0 1.4 A
TA Operating ambient temperature –40 125 °C
(1) Operational at VREF ≈ 0 to 0.3 V, but accuracy is degraded
(2) Power dissipation and thermal limits must be observed

6.4 Thermal Information

THERMAL METRIC (1) DRV8881 UNIT
PWP (HTSSOP) RHR (WQFN)
28 PINS 28 PINS
RθJA Junction-to-ambient thermal resistance 33.1 37.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 16.6 23.0 °C/W
RθJB Junction-to-board thermal resistance 14.4 8.0 °C/W
ψJT Junction-to-top characterization parameter 0.4 0.2 °C/W
ψJB Junction-to-board characterization parameter 14.2 7.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.3 1.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VM, V3P3)
VM VM operating voltage 6.5 45 V
IVM VM operating supply current nSLEEP high; ENABLE high; no motor load; VM = 24 V 8 18 mA
IVMQ VM sleep mode supply current nSLEEP low; VM = 24 V; TA = 25°C 28 μA
nSLEEP low; VM = 24 V; TA = 125°C (1) 77
tSLEEP Sleep time nSLEEP low to sleep mode 100 μs
tWAKE Wake-up time nSLEEP high to output transition 1.5 ms
tON Turn-on time VM > VUVLO to output transition 1.5 ms
V3P3 Internal regulator voltage External load 0 to 10 mA 2.9 3.3 3.6 V
CHARGE PUMP (VCP, CPH, CPL)
VCP VCP operating voltage VM > 12 V VM + 11.5 V
VUVLO < VM < 12 V 2×VM – 1.5
ƒVCP(1) Charge pump switching frequency VM > VUVLO 175 715 kHz
LOGIC-LEVEL INPUTS (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP, TRQ0, TRQ1, PARA)
VIL Input logic low voltage 0 0.6 V
VIH Input logic high voltage 1.6 5.3 V
VHYS Input logic hysteresis 100 mV
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 5.0 V 50 100 μA
RPD Pulldown resistance Measured between the pin and GND 100 kΩ
tPD Propagation delay xPH, xEN, xINx input to current change 450 ns
TRI-LEVEL INPUTS (ADECAY, BDECAY, TOFF)
VIL Tri-level input logic low voltage 0 0.6 V
VIZ Tri-level input Hi-Z voltage 1.1 V
VIH Tri-level input logic high voltage 1.6 5.3 V
VHYS Tri-level input hysteresis 100 mV
IIL Tri-level input logic low current VIN = 0 V –55 –35 μA
IIZ Tri-level input Hi-Z current VIN = 1.3 V 15 μA
IIH Tri-level input logic high current VIN = 3.3 V 85 μA
RPD Tri-level pulldown resistance Measured between the pin and GND 40 kΩ
RPU Tri-level pullup resistance Measured between V3P3 and the pin 45 kΩ
CONTROL OUTPUTS (nFAULT)
VOL Output logic low voltage IO = 4 mA 0.5 V
IOH Output logic high leakage External pullup resistor to 3.3 V –1 1 μA
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2)
RDS(ON) High-side FET on resistance VM = 24 V, I = 1 A, TA = 25°C 330 mΩ
VM = 24 V, I = 1 A, TA = 125°C (1) 400 440
VM = 6.5 V, I = 1 A, TA = 25°C 430
VM = 6.5 V, I = 1 A, TA = 125°C (1) 500 560
RDS(ON) Low-side FET on resistance VM = 24 V, I = 1 A, TA = 25°C 300 mΩ
VM = 24 V, I = 1 A, TA = 125°C (1) 370 400
VM = 6.5 V, I = 1 A, TA = 25°C 370
VM = 6.5 V, I = 1 A, TA = 125°C (1) 450 490
tRISE Output rise time VM = 24 V, 50 Ω load from xOUTx to GND 70 ns
tFALL Output fall time VM = 24 V, 50 Ω load from VM to xOUTx 70 ns
tDEAD Output dead time (2) 200 ns
Vd Body diode forward voltage IOUT = 0.5 A 0.7 1 V
PWM CURRENT CONTROL (VREF, AISEN, BISEN)
VTRIP xISENSE trip voltage, full scale current step TRQ at 100%, VREF = 3.3 V 500 mV
TRQ at 75%, VREF = 3.3 V 375
TRQ at 50%, VREF = 3.3 V 250
TRQ at 25%, VREF = 3.3 V 125
AV Amplifier attenuation Torque = 100% (TRQ0 = 0, TRQ1 = 0) 6.25 6.58 6.91 V/V
Torque = 75% (TRQ0 = 1, TRQ1 = 0) 6.2 6.56 6.92
Torque = 50% (TRQ0 = 0, TRQ1 = 1) 6.09 6.51 6.94
Torque = 25% (TRQ0 = 1, TRQ1 = 1) 5.83 6.38 6.93
tOFF PWM off-time TOFF logic low 20 μs
TOFF logic high 30
TOFF Hi-Z 10
tBLANK PWM blanking time See Table 6 for details 1.8 µs
1.5
1.2
0.9
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VM falling; UVLO report 5.8 6.4 V
VM rising; UVLO recovery 6.1 6.5
VUVLO,HYS Undervoltage hysteresis Rising to falling threshold 100 mV
VCPUV Charge pump undervoltage VCP falling; CPUV report VM + 1.8 V
VCP rising; CPUV recovery VM + 1.9
VCPUV,HYS CP undervoltage hysteresis Rising to falling threshold 50 mV
IOCP Overcurrent protection trip level Current through any FET 2.5 3.6 A
VOCP Sense pin overcurrent trip level Voltage at AISEN or BISEN 0.9 1.25 V
tOCP Overcurrent deglitch time 2 μs
tRETRY Overcurrent retry time 0.5 2 ms
TTSD(2) Thermal shutdown temperature Die temperature TJ 150 °C
THYS(2) Thermal shutdown hysteresis Die temperature TJ 35 °C
(1) Specified by design and characterization data
(2) Specified by design and characterization data

6.6 Typical Characteristics

Over recommended operating conditions (unless otherwise noted)
DRV8881 D001_SLVSD18.gif
Figure 1. Supply Current over VM
DRV8881 D003_SLVSD18.gif
Figure 3. Sleep Current over VM
DRV8881 D005_SLVSD18.gif
Figure 5. High-Side RDS(ON) over VM
DRV8881 D007_SLVSD18.gif
Figure 7. Low-Side RDS(ON) over VM
DRV8881 D009_SLVSD18.gif
Figure 9. xISEN Trip Voltage over VREF Input
DRV8881 D002_SLVSD18.gif
Figure 2. Supply Current over Temperature
DRV8881 D004_SLVSD18.gif
Figure 4. Sleep Current over Temperature
DRV8881 D006_SLVSD18.gif
Figure 6. High-Side RDS(ON) over Temperature (VM = 12 V)
DRV8881 D008_SLVSD18.gif
Figure 8. Low-Side RDS(ON) over Temperature (VM = 12 V)
DRV8881 D010_SLVSD18.gif
Figure 10. V3P3 Regulator over Load (VM = 24 V)