ZHCSDY9A June   2015  – July 2015 DRV8881

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1  Motor Driver Current Ratings
        1. 7.3.1.1 Peak Current Rating
        2. 7.3.1.2 RMS Current Rating
        3. 7.3.1.3 Full-Scale Current Rating
      2. 7.3.2  PWM Motor Drivers
      3. 7.3.3  Bridge Control
      4. 7.3.4  Current Regulation
      5. 7.3.5  Decay Modes
        1. 7.3.5.1 Mode 1: Slow Decay
        2. 7.3.5.2 Mode 2: Fast Decay
        3. 7.3.5.3 Mode 3: 30%/70% Mixed Decay
      6. 7.3.6  AutoTune
      7. 7.3.7  Adaptive Blanking Time
      8. 7.3.8  Parallel Mode
      9. 7.3.9  Charge Pump
      10. 7.3.10 LDO Voltage Regulator
      11. 7.3.11 Logic and Tri-Level Pin Diagrams
      12. 7.3.12 Protection Circuits
        1. 7.3.12.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.12.2 VCP UVLO (CPUV)
        3. 7.3.12.3 Overcurrent Protection (OCP)
        4. 7.3.12.4 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 DRV8881P Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Current Regulation
          2. 8.2.1.2.2 Stepper Motor Speed
          3. 8.2.1.2.3 Decay Modes
          4. 8.2.1.2.4 Sense Resistor
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Alternate Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Current Regulation
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Layout

10.1 Layout Guidelines

Each VM terminal must be bypassed to GND using a low-ESR ceramic bypass capacitors with recommended values of 0.1 μF rated for VM. These capacitors should be placed as close to the VM pins as possible with a thick trace or ground plane connection to the device GND pin.

The VM pin must be bypassed to ground using a bulk capacitor rated for VM. This component may be an electrolytic.

A low-ESR ceramic capacitor must be placed in between the CPL and CPH pins. A value of 0.1 μF rated for VM is recommended. Place this component as close to the pins as possible.

A low-ESR ceramic capacitor must be placed in between the VM and VCP pins. A value of 0.47 μF rated for 16 V is recommended. Place this component as close to the pins as possible.

Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypassing capacitor as close to the pin as possible.

The current sense resistors should be placed as close as possible to the device pins in order to minimize trace inductance between the pin and resistor.

10.2 Layout Example

DRV8881 layout_ex_lvsd19.gifFigure 33. Layout Recommendation