ZHCSCC0A April   2014  – July 2015 CSD95372BQ5MC

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     Device Images
  4. 4修订历史记录
  5. 5Pin Configuration and Functions
    1.     Pin Functions
  6. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
  7. 7Application Schematic
  8. 8器件和文档支持
    1. 8.1 社区资源
    2. 8.2 商标
    3. 8.3 静电放电警告
    4. 8.4 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 机械制图
    2. 9.2 建议印刷电路板 (PCB) 焊盘图案
    3. 9.3 建议模板开口

封装选项

机械数据 (封装 | 引脚)
  • DMC|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.3 Recommended Operating Conditions

TA = 25° (unless otherwise noted)
MIN MAX UNIT
VDD Gate drive voltage 4.5 5.5 V
VIN Input supply voltage(1) 16 V
VOUT Output voltage 5.5 V
IOUT Continuous output current VIN = 12 V, VDD = 5V, VOUT = 3.3 V,
ƒSW = 500 kHz, LOUT = 0.47 µH(2) 		60 A
IOUT-PK Peak output current(3) 90 A
ƒSW Switching frequency CBST = 0.1 µF (min) 1250 kHz
On-time duty cycle ƒSW = 1 MHz 85%
Minimum PWM on-time 40 ns
Operating temperature –40 125 °C
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(3) System conditions as defined in Note 1. Peak Output Current is applied for tp = 50 µs