ZHCSHU1 March   2018 CSD86336Q3D

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     俯视图
      1.      Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics – Q1 Control FET
    6. 5.6 Electrical Characteristics – Q2 Sync FET
    7. 5.7 Typical Power Block Device Characteristics
    8. 5.8 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
    2. 6.2 Power Loss Curves
    3. 6.3 Safe Operating Area (SOA) Curves
    4. 6.4 Normalized Curves
    5. 6.5 Calculating Power Loss and Safe Operating Area (SOA)
      1. 6.5.1 Design Example
      2. 6.5.2 Calculating Power Loss
      3. 6.5.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Recommended Schematic Overview
    2. 7.2 Recommended PCB Design Overview
      1. 7.2.1 Electrical Performance
      2. 7.2.2 Thermal Performance
  8. 8器件和文档支持
    1. 8.1 接收文档更新通知
    2. 8.2 社区资源
    3. 8.3 商标
    4. 8.4 静电放电警告
    5. 8.5 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 Q3D 封装尺寸
    2. 9.2 引脚配置
    3. 9.3 焊盘图案建议
    4. 9.4 模版建议

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.6 Electrical Characteristics – Q2 Sync FET

Tj = 25 °C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 25 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 1.0 1.3 1.6 V
ZDS(on) Effective AC on-impedance VIN = 12 V, VGS = 5 V, VOUT = 1.3 V,
IOUT = 20 A, ƒSW = 500 kHz,
LOUT = 950 nH		 3.4 mΩ
gfs Transconductance VDS = 2.5 V, IDS = 14 A 57 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 Mhz 728 970 pF
COSS Output capacitance 501 664 pF
CRSS Reverse transfer capacitance 26 33 pF
RG Series gate resistance 0.65 1.3 Ω
Qg Gate charge total (4.5 V) VDS = 12.5 V, IDS = 14 A 5.7 7.4 nC
Qgd Gate charge – gate-to-drain 1.2 nC
Qgs Gate charge – gate-to-source 2.1 nC
Qg(th) Gate charge at Vth 1.0 nC
QOSS Output charge VDS = 12.5 V, VGS = 0 V 10.3 nC
td(on) Turn on delay time VDS = 12.5 V, VGS = 4.5 V, IDS = 14 A,
RG = 0 Ω		 4 ns
tr Rise time 10 ns
td(off) Turn off delay time 8 ns
tf Fall time 2 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 14 A, VGS = 0 V 0.82 0.95 V
Qrr Reverse recovery charge VDS = 12.5 V, IF = 14 A, di/dt = 300 A/µs 25.4 nC
trr Reverse recovery time 18 ns

CSD86336Q3D RthMax.gif
Max RθJA = 55°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD86336Q3D RthMin.gif
Max RθJA = 105°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu.