ZHCSE28B 数据表 | 德州仪器 TI.com.cn

ZHCSE28B August 2015 – November 2022 CSD19537Q3

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 5-1 Transient Thermal Impedance

Figure 5-2 Saturation Characteristics

	I_D = 10 A	V_DS = 50 V

Figure 5-4 Gate Charge

	I_D = 250 µA

Figure 5-6 Threshold Voltage vs Temperature

	I_D = 10 A

Figure 5-8 Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJC = 1.5°C/W

Figure 5-10 Maximum Safe Operating Area

Figure 5-12 Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 5-3 Transfer Characteristics

Figure 5-5 Capacitance

Figure 5-7 On-State Resistance vs Gate-to-Source Voltage

Figure 5-9 Typical Diode Forward Voltage

Figure 5-11 Single Pulse Unclamped Inductive Switching