ZHCSE28B August   2015  – November 2022 CSD19537Q3

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, ID = 250 μA100V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 80 V1μA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 20 V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, ID = 250 μA2.633.6V
RDS(on)Drain-to-source on-resistanceVGS = 6 V, ID = 10 A13.816.6mΩ
VGS = 10 V, ID = 10 A12.114.5mΩ
gfsTransconductanceVDS = 10 V, ID = 10 A45S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 50 V, ƒ = 1 MHz12901680pF
CossOutput capacitance251326pF
CrssReverse transfer capacitance13.317.3pF
RGSeries gate resistance1.22.4
QgGate charge total (10 V)VDS = 50 V, ID = 10 A1621nC
QgdGate charge gate-to-drain2.9nC
QgsGate charge gate-to-source5.5nC
Qg(th)Gate charge at Vth3.8nC
QossOutput chargeVDS = 50 V, VGS = 0 V44nC
td(on)Turn on delay timeVDS = 50 V, VGS = 10 V,
IDS = 10 A, RG = 0 Ω
5ns
trRise time3ns
td(off)Turn off delay time10ns
tfFall time3ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 10 A, VGS = 0 V0.81V
QrrReverse recovery chargeVDS= 50 V, IF = 10 A,
di/dt = 300 A/μs
134nC
trrReverse recovery time36ns