ZHCSAE6B September   2012  – January 2016 CSD17551Q3A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     顶视图
      1.      Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 社区资源
    2. 6.2 商标
    3. 6.3 静电放电警告
    4. 6.4 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q3A 封装尺寸
    2. 7.2 Q3A 建议的 PCB 布局
    3. 7.3 Q3A 建议的模板布局
    4. 7.4 Q3A 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DNH|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD17551Q3A graph01_SLPS386.png
Figure 1. Transient Thermal Impedance
CSD17551Q3A graph02_SLPS386.png
Figure 2. Saturation Characteristics
CSD17551Q3A graph04p2_SLPS386.png
Figure 4. Gate Charge
CSD17551Q3A graph06_SLPS386.png
Figure 6. Threshold Voltage vs Temperature
CSD17551Q3A graph08_SLPS386.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD17551Q3A graph10p3_SLPS386.png
Figure 10. Maximum Safe Operating Area
CSD17551Q3A graph12_SLPS386.png
Figure 12. Maximum Drain Current vs Temperature
CSD17551Q3A graph03_SLPS386.png
Figure 3. Transfer Characteristics
CSD17551Q3A graph05_SLPS386.png
Figure 5. Capacitance
CSD17551Q3A graph07p2_SLPS386.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD17551Q3A graph09_SLPS386.png
Figure 9. Typical Diode Forward Voltage
CSD17551Q3A graph11_SLPS386.png
Figure 11. Single Pulse Unclamped Inductive Switching