ZHCSGW5B January   2017  – October 2020 CC2640R2F-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 功能方框图
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Wettable Flanks
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Consumption Summary
    5. 8.5  General Characteristics
    6. 8.6  1-Mbps GFSK (Bluetooth low energy Technology) – RX
    7. 8.7  1-Mbps GFSK (Bluetooth low energy Technology) – TX
    8. 8.8  24-MHz Crystal Oscillator (XOSC_HF)
    9. 8.9  32.768-kHz Crystal Oscillator (XOSC_LF)
    10. 8.10 48-MHz RC Oscillator (RCOSC_HF)
    11. 8.11 32-kHz RC Oscillator (RCOSC_LF)
    12. 8.12 ADC Characteristics
    13. 8.13 Temperature Sensor
    14. 8.14 Battery Monitor
    15. 8.15 Continuous Time Comparator
    16. 8.16 Low-Power Clocked Comparator
    17. 8.17 Programmable Current Source
    18. 8.18 Synchronous Serial Interface (SSI)
    19. 8.19 DC Characteristics
    20. 8.20 Thermal Resistance Characteristics for RGZ Package
    21. 8.21 Timing Requirements
    22. 8.22 Switching Characteristics
    23. 8.23 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Main CPU
    3. 9.3  RF Core
    4. 9.4  Sensor Controller
    5. 9.5  Memory
    6. 9.6  Debug
    7. 9.7  Power Management
    8. 9.8  Clock Systems
    9. 9.9  General Peripherals and Modules
    10. 9.10 System Architecture
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 7 × 7 Internal Differential (7ID) Application Circuit
      1. 10.2.1 Layout
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Texas Instruments Low-Power RF Website
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Export Control Notice
    9. 11.9 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

11.1 Device Nomenclature

To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and date-code. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example, CC2640R2F-Q1 is in production; therefore, no prefix/identification is assigned).

Device development evolutionary flow:

    XExperimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow.
    PPrototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications.
    nullProduction version of the silicon die that is fully qualified.

Production devices have been characterized fully, and the quality and reliability of the device have been demonstrated fully. TI's standard warranty applies.

Predictions show that prototype devices (X or P) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used.

TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type (for example, RGZ).

For orderable part numbers of the CC2640R2F-Q1 device package types, see the Package Option Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative.

GUID-C8091217-448E-4B50-8F88-BC461B343641-low.gif Figure 11-1 Device Nomenclature