ZHCSGW5B January   2017  – October 2020 CC2640R2F-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 功能方框图
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Wettable Flanks
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Consumption Summary
    5. 8.5  General Characteristics
    6. 8.6  1-Mbps GFSK (Bluetooth low energy Technology) – RX
    7. 8.7  1-Mbps GFSK (Bluetooth low energy Technology) – TX
    8. 8.8  24-MHz Crystal Oscillator (XOSC_HF)
    9. 8.9  32.768-kHz Crystal Oscillator (XOSC_LF)
    10. 8.10 48-MHz RC Oscillator (RCOSC_HF)
    11. 8.11 32-kHz RC Oscillator (RCOSC_LF)
    12. 8.12 ADC Characteristics
    13. 8.13 Temperature Sensor
    14. 8.14 Battery Monitor
    15. 8.15 Continuous Time Comparator
    16. 8.16 Low-Power Clocked Comparator
    17. 8.17 Programmable Current Source
    18. 8.18 Synchronous Serial Interface (SSI)
    19. 8.19 DC Characteristics
    20. 8.20 Thermal Resistance Characteristics for RGZ Package
    21. 8.21 Timing Requirements
    22. 8.22 Switching Characteristics
    23. 8.23 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  Main CPU
    3. 9.3  RF Core
    4. 9.4  Sensor Controller
    5. 9.5  Memory
    6. 9.6  Debug
    7. 9.7  Power Management
    8. 9.8  Clock Systems
    9. 9.9  General Peripherals and Modules
    10. 9.10 System Architecture
  10. 10Application, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 7 × 7 Internal Differential (7ID) Application Circuit
      1. 10.2.1 Layout
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Texas Instruments Low-Power RF Website
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Export Control Notice
    9. 11.9 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.8 24-MHz Crystal Oscillator (XOSC_HF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
ESR Equivalent series resistance(2)6 pF < CL ≤ 9 pF2060Ω
ESR Equivalent series resistance(2)5 pF < CL ≤ 6 pF80Ω
LM Motional inductance(2)Relates to load capacitance
(CL in Farads)		< 1.6 × 10–24 / CL2H
CL Crystal load capacitance(2)59pF
Crystal frequency(2)(3)24MHz
Crystal frequency tolerance(2)(4)–4040ppm
Start-up time(3)(5)150µs
(1) Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
(2) The crystal manufacturer's specification must satisfy this requirement
(3) Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V
(4) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance, as per Bluetooth specification.
(5) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.