ZHCSCF9 May   2014 BUF16821-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Two-Wire Bus Overview
      2. 7.3.2 Data Rates
      3. 7.3.3 General-Call Reset and Power-Up
      4. 7.3.4 Output Voltage
      5. 7.3.5 Updating the DAC Output Voltages
      6. 7.3.6 DIE_ID and DIE_REV Registers
      7. 7.3.7 Read and Write Operations
        1. 7.3.7.1 Read and Write: DAC and VCOM Register (Volatile Memory)
        2. 7.3.7.2 Writing: DAC and VCOM Register (Volatile Memory)
        3. 7.3.7.3 Reading: DAC, VCOM, Other Register (Volatile Memory)
        4. 7.3.7.4 Write: Nonvolatile Memory for the DAC Register
        5. 7.3.7.5 Read: Nonvolatile Memory for the DAC Register
      8. 7.3.8 Output Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 End-User Selected Gamma Control
      2. 7.4.2 Dynamic Gamma Control
    5. 7.5 Programming
      1. 7.5.1 Addressing the Device
      2. 7.5.2 Nonvolatile Memory
        1. 7.5.2.1 BKSEL Pin
        2. 7.5.2.2 General Acquire Command
        3. 7.5.2.3 Single-Channel Acquire Command
        4. 7.5.2.4 MaxBank
        5. 7.5.2.5 Parity Error Correction
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 General PowerPAD Design Considerations
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档　
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 器件和文档支持

11.1 文档支持

11.1.1 相关文档　

相关文档如下：

  • 《BUF16821EVM-USB 用户指南》，SBOU106
  • 《BUF20820 数据表》，SBOS330
  • 《PowerPAD 散热增强型封装》，SLMA002
  • 《用伽马缓冲器驱动电容负载》，SBOA134

11.2 Trademarks

I2C is a trademark of NXP Semiconductors.

PowerPAD is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms and definitions.