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UCC27614

現行

30V VDD, 10A/10A single-channel low-side driver with 4V UVLO and low propagation delay

產品詳細資料

Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 10 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin, UVLO Operating temperature range (°C) -40 to 150 Rise time (ns) 5 Fall time (ns) 4 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic CMOS, TTL Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Single
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DSG) 8 4 mm² 2 x 2
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C
  • Typical 10-A sink 10-A source output currents
  • Input and enable pins capable of withstanding up to –10 V
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Available in 2-mm x 2-mm SON8 package
  • Typical 17.5-ns propagation delay
  • EN (enable) pin in SOIC8 package
  • IN– pin can be used for enable/disable functionality
  • VDD independent input thresholds (TTL compatible)
  • Can be used as inverting or non-inverting driver
  • Operating junction temperature range of –40°C to 150°C

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

The UCC27614 is a single channel, high-speed, low-side gate driver capable of effectively driving MOSFET, IGBT, SiC, and GaN power switches. UCC27614 has a typical peak drive strength of 10 A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27614 device’s small propagation delay yields better power stage efficiency by improving the dead-time optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27614 can handle –10-V on its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independent of the main control logic. The gate driver can quickly shut off the power stage if there is a fault in the system (which requires the power train to be turned-off). The enable function also improves system robustness. Many high-frequency switching power supplies exhibit high frequency noise at the gate of the power device, which can get injected into the output pin of the gate driver and can cause the driver to malfunction. The UCC27614 performs well in such conditions due to its transient reverse current and reverse voltage capability.

The strong internal pulldown MOSFET holds the output low if the VDD voltage is below the specified UVLO threshold. This active pulldown feature further improves system robustness. The UCC27614 device’s 10-A drive current in the 2-mm × 2mm package improves system power density. This small package also enables optimum gate driver placement and improved layout.

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類型 標題 日期
* Data sheet UCC27614 30-V, 10-A Single Channel Low Side Gate Driver with –10-V Input Capability datasheet (Rev. C) PDF | HTML 2022年 1月 21日
Application note Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML 2025年 11月 7日
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024年 1月 22日
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 2023年 9月 8日
Technical article Managing power-supply noise with a 30-V gate driver PDF | HTML 2021年 12月 7日
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021年 11月 10日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
Application brief Enable Function with Unused Differential Input 2018年 7月 11日
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日

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開發板

UCC27614EVM — 適用於單通道 30-V、10-A 高速低壓側閘極驅動器的 UCC27614 評估模組

UCC27614 評估模組 (EVM) 專為評估 TI 的 30-V、10-A 單通道 2 × 2 閘極驅動器而設計。此 EVM 的目標是依產品規格書參數評估驅動器 IC。驅動器 IC 可針對各種電容與電阻負載進行評估。EVM 可以設定為反相或非反相配置。EVM 具備評估 TO-220 體積功率電晶體的佈建。

使用指南: PDF | HTML
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模擬型號

UCC27614 SIMPLIS Model

SLUM794.ZIP (74 KB) - SIMPLIS Model
模擬型號

UCC27614 Unencrypted PSpice Model

SLUM885.ZIP (18 KB) - PSpice Model
計算工具

SLURB20 UCC27614 Schematic Review Template

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產品
低壓側驅動器
UCC27614 30V VDD, 10A/10A single-channel low-side driver with 4V UVLO and low propagation delay
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參考設計

PMP23126 — 3-kW 全橋相移式轉換器搭配主動箝位參考設計,可提供 > 270-W/in3 的功率密度

此參考設計是專為最高功率密度設計的 GaN 式 3-kW 全橋相移式轉換器 (PSFB)。此設計具主動箝位可減少二次側同步整流器 MOSFET 的電壓應力,以使用具更出色品質因數 (FoM) 的低電壓額定值 MOSFET。PMP23126 使用我們的一次側 30mΩ GaN 和二次側矽 MOSFET。與矽 MOSFET 相比,具整合式驅動器與保護的 LMG3522 頂端冷卻 GaN 可在更大的操作範圍中維持 ZVS,以實現更高效率。PSFB 可在 100 kHz 運作,並可達 97.74% 峰值效率。
Test report: PDF
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SOIC (D) 8 Ultra Librarian
WSON (DSG) 8 Ultra Librarian

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