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UCC27512

現行

採用 SON 封裝且具 5-V UVLO 與分離輸出的 4-A/8-A 單通道閘極驅動器

產品詳細資料

Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Hysteretic Logic Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Hysteretic Logic Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
WSON (DRS) 6 9 mm² (3 mm × 3 mm)
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical
    Drive
  • Strong Sink Current Offers Enhanced Immunity
    Against Miller Turnon
  • Split Output Configuration (Allows Easy and
    Independent Adjustment of Turnon and Turnoff
    Speeds) in the UCC27511 Saves 1 Diode
  • Fast Propagation Delays (13-ns Typical)
  • Fast Rise and Fall Times (9-ns and 7-ns Typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power
    Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual-Input Design (Choice of an Inverting
    (IN– Pin) or Noninverting (IN+ Pin)
    Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low When Input Pins Are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C
    to 140°C
  • 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×
    3-mm WSON With Exposed Thermal Pad) Package
    Options
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical
    Drive
  • Strong Sink Current Offers Enhanced Immunity
    Against Miller Turnon
  • Split Output Configuration (Allows Easy and
    Independent Adjustment of Turnon and Turnoff
    Speeds) in the UCC27511 Saves 1 Diode
  • Fast Propagation Delays (13-ns Typical)
  • Fast Rise and Fall Times (9-ns and 7-ns Typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power
    Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual-Input Design (Choice of an Inverting
    (IN– Pin) or Noninverting (IN+ Pin)
    Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low When Input Pins Are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C
    to 140°C
  • 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×
    3-mm WSON With Exposed Thermal Pad) Package
    Options

The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or IN– pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.

The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511 device also features a unique split output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

UCC27511 and UCC27512 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or IN– pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.

The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511 device also features a unique split output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

UCC27511 and UCC27512 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

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設計與開發

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模擬型號

UCC27512 PSpice Transient Model (Rev. B)

SLUM316B.ZIP (50 KB) - PSpice 模型
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模擬型號

UCC27512 TINA-TI Transient Model

SLUM442.ZIP (9 KB) - TINA-TI Spice 模型
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模擬型號

UCC27512 TINA-TI Transient Reference Design

SLUM441.TSC (74 KB) - TINA-TI 參考設計
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模擬型號

UCC27512 Unencrypted PSpice Transient Model

SLUM489.ZIP (2 KB) - PSpice 模型
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計算工具

SLURB27 — UCC27511 and UCC27512 Schematic Review Template

Design reference and reference for the UCC27511 and the UCC27512 to assist in system design.
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參考設計

PMP22089 — 具有 GAN 技術的半橋負載點轉換器參考設計

此參考設計修改內側變壓器匝數比,從 5:1 修改至 3:1,以縮小輸入範圍。電路板支援 24V 至 32V 的輸入電壓以及 0.5V 至 1.0V 的輸出電壓,輸出電流高達 40A。 此拓撲可有效支援高降壓比,同時提供顯著的輸出電流和可控性。原始 EVM 的設計旨在評估 LMG5200 GaN 半橋功率級和 TPS53632G 半橋負載點 (PoL) 控制器。此電路板可將轉換器當成具有倍流整流器的單級硬切換半橋使用。  此電路板是 LMG5200POLEVM-10 評估模組的重新設計。
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參考設計

PMP4497 — LMG5200 48V 轉 1V/40A 單段式轉換器參考設計

PMP4497 是一款基於 GaN 的參考設計解決方案,適用於 FPGA 與 ASIC 等應用的 Vcore 供電。採用高整合度與低開關損耗設計的 GaN 模組 LMG5200,可實現從 48V 至 1.0V 的高效率單級解決方案,取代傳統兩級架構。此設計展現了 GaN 的性能表現與系統優勢,並與傳統兩級解決方案進行對比。  電路板上嵌入了一款低成本 ER18 平面 PCB 變壓器。此設計以精巧外型尺寸 (45mm*26mm*11mm) 實現完整功能。透過最佳化工作頻率與元件,可進一步縮小整體尺寸。
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
WSON (DRS) 6 Ultra Librarian

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