LM74722-Q1
- AEC-Q100 qualified with the following results
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
- 3-V to 65-V input range
- Reverse input protection down to –65 V
- Low quiescent current 35 µA (max) in operation
- Low 3.3-µA (max) shutdown current (EN = Low)
- Ideal diode operation with 13-mV A to C forward voltage drop regulation
- Drives external back-to-back N-Channel MOSFETs
- Integrated 30-mA boost regulator
- Active rectification up to 200 kHz
- Fast response to reverse current blocking: 0.5 µs
- Fast forward GATE turn ON delay: 0.72 µs
- Adjustable overvoltage protection
- Meets automotive ISO7637 transient requirements with a suitable TVS diode
- Available in space saving 12-pin WSON package
The LM74722-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn-ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing, such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 200-kHz frequency. Low quiescent current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff or overvoltage clamp protection using OV pin.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM74722-Q1 Automotive Low IQ Ideal Diode Controller with 200-kHz Active Rectification and Load Dump Protection datasheet (Rev. B) | PDF | HTML | 2022/8/4 | ||
| 技術文章 | 3 ways to design a low quiescent-current (Iq) automotive reverse battery protectio | PDF | HTML | 2021/11/18 | |||
| 應用說明 | Basics of Ideal Diodes (Rev. B) | PDF | HTML | 2021/10/5 | |||
| Application brief | Active Rectification and its Advantages in Automotive ECU Designs | PDF | HTML | 2021/9/29 | |||
| 類比設計期刊 | Automotive EMC-compliant reverse-battery protection with ideal-diode controllers | 2020/9/22 |
設計與開發
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LM7472EVM — 適用於理想二極體控制器的 LM74720-Q1 與 LM74722-Q1 評估模組
TI 的評估模組 LM7472EVM 可協助設計人員評估 LM74720-Q1和 LM74722-Q1 理想二極體控制器在反向電池保護應用中的運作及性能。此評估模組展示 LM7472x-Q1 如何搭配用於低 IQ 和快速瞬態回應的整合式升壓穩壓器，控制兩個背對背 N 通道功率 MOSFET，其先連接理想二極體 MOSFET，緊接著再連接用於切換輸出及電源路徑切斷的第二個 MOSFET。
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (DRR) | 12 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。