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UCC5304

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Reinforced, 4A/6A single-channel isolated gate driver

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UCC5304

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产品详情

Number of channels 1 Isolation rating Reinforced Power switch GaNFET, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features High CMTI Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1500 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5
Number of channels 1 Isolation rating Reinforced Power switch GaNFET, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features High CMTI Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1500 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5
SOIC (DWV) 8 67.275 mm² (5.85 mm × 11.5 mm)
  • Reinforced isolation
  • Single channel in DWV Package with 8.5-mm creepage distance
  • CMTI greater than 100-V/ns
  • 4-A peak source, 6-A peak sink output
  • Switching parameters:
    • 40-ns maximum propagation delay
    • 5-ns maximum delay matching
    • 5.5-ns maximum pulse-width distortion
    • 35-µs maximum VDD power-up delay
  • Up to 18-V VDD output drive supply
    • 5-V VDD UVLO
  • Operating temp. range (TA) –40°C to 125°C
  • Rejects input pulses shorter than 5-ns
  • TTL and CMOS compatible inputs
  • Reinforced isolation
  • Single channel in DWV Package with 8.5-mm creepage distance
  • CMTI greater than 100-V/ns
  • 4-A peak source, 6-A peak sink output
  • Switching parameters:
    • 40-ns maximum propagation delay
    • 5-ns maximum delay matching
    • 5.5-ns maximum pulse-width distortion
    • 35-µs maximum VDD power-up delay
  • Up to 18-V VDD output drive supply
    • 5-V VDD UVLO
  • Operating temp. range (TA) –40°C to 125°C
  • Rejects input pulses shorter than 5-ns
  • TTL and CMOS compatible inputs

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity 数据表 (Rev. B) PDF | HTML 2020-4-20
* 用户指南 Gate Drive Voltage vs. Efficiency 2019-4-25
证书 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026-7-15
应用简报 栅极驱动电路中铁氧体磁珠的使用和优势 PDF | HTML 英语版 PDF | HTML 2022-11-14
应用手册 使用UCC28780控制器和UCC5304隔离式同步整流驱动器实现零电压开关反激拓扑 英语版 PDF | HTML 2021-7-2

设计与开发

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评估板

UCC28781EVM-053 — 适用于 UCC28781-Q1 汽车类 500Vdc 输入 ZVS 反激式电源应用的评估模块

UCC28781EMV-053 展示了采用零电压开关反激式 (ZVSF) 控制器的高效率、高密度、高电压汽车偏置电源，具有 60W、15V 输出。 UCC28781-Q1 直接驱动初级侧硅 MOSFET，并通过 UCC5304 隔离式栅极驱动器驱动次级侧同步整流器，用于提高效率并实现 ZVS。

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评估板

UCC5304EVM-035 — UCC5304 单通道隔离式栅极驱动器评估模块

UCC5304EVM 适用于评估 UCC5304，后者是一种具备 4A 峰值拉电流和 6A 峰值灌电流能力的隔离式单通道栅极驱动器。此 EVM 可用作功率 MOSFET 的驱动参考设计，具备高达 18V 的驱动电压、UCC5304 引脚功能识别、组件选择指南以及 PCB 布局示例。
用户指南: PDF
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仿真模型

SIMPLIS Model for UCC5304

SLUM722.ZIP (25 KB) - SIMPLIS 模型
支持的产品和硬件
参考设计

PMP22322 — 65W USB Type-C® ZVS 反激式参考设计

此参考设计是一款低成本、高密度 USB 适配器，在 ZVS 反激式拓扑中使用了 UCC28782 有源钳位反激式控制器和 UCC5304 隔离式驱动器。输出电压为 20V 时，最大额定功率是 65W，但可调节为 20V/15V/9V/5V 输出电压和 3A 电流。此设计的峰值效率可达 93.4%。平均效率和待机功耗等级符合 DoE VI 级和 CoC 2 级限值。该设计外型紧凑，尺寸仅 44mm × 54mm × 20mm（48cc 开放式框架）。
支持的产品和硬件
参考设计

PMP22495 — 176V 至 264V 交流输入、24V、150W 有源钳位正激式参考设计

此参考设计使用 UCC2897A 有源钳位正向控制器将 176V 至 264V 交流输入转换为 24V 直流输出，最大功率为 150W。UCC5304 隔离式栅极驱动器用于驱动高压钳位 FET。该设计通过二极管整流实现了 > 92% 的效率。次级侧电流检测通过恒流调节环路提供精确的过流保护。该设计通过了 CISPR 32 传导辐射测试。

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封装 引脚 CAD 符号、封装和 3D 模型
SOIC (DWV) 8 Ultra Librarian
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