TPS25940
- 2.7 V – 18 V Operating Voltage, 20 V (Max)
- 42 mΩ RON (Typical)
- 0.6 A to 5.3 A Adjustable Current Limit (±8%)
- IMON Current Indicator Output (±8%)
- 200 µA Operating IQ (Typical)
- 95 µA DevSleep Mode IQ (Typical)
- 15 µA Disabled IQ (Typical)
- ±2% Overvoltage, Undervoltage Threshold
- Reverse Current Blocking
- 1 µs Reverse Voltage Shutoff
- Programmable dVo/dt Control
- Power Good and Fault Outputs
- 40°C to 125°C Junction Temperature Range
- UL 2367 Recognized
- File No. 169910
- RILIM ≥ 20 kΩ (4.81 A max)
- UL60950 - Safe during Single Point Failure Test
- Open/Short ILIM detection
The TPS25940 eFuse Power Switch is a compact, feature rich power management device with a full suite of protection functions, including a low power DevSleep™ mode that supports compliance with the SATA™ Device Sleep standard. The wide operating range allows control of many popular DC bus voltages. Integrated back to back FETs provide bidirectional current control making the device well suited for systems with load side holdup energy that must not drain back to a failed supply bus.
Load, source and device protection are provided with many programmable features including overcurrent, dVo/dt ramp and overvoltage, undervoltage thresholds. For system status monitoring and downstream load control, the device provides PGOOD, FLT and precise current monitor output. Precise programmable undervoltage, overvoltage thresholds and the low IQ DevSleep mode simplify SSD power management design.
The TPS25940 monitors V(IN) and V(OUT) to provide true reverse current blocking when V(IN) < (V(OUT) - 10 mV). This function supports swift changeover to a boosted voltage energy storage element in systems where backup voltage is greater than bus voltage.
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设计与开发
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此解决方案可为 SSD 等系统存储并提供“最后关头”的能量。这些系统在断电后仍需短暂维持功能,以便以受控方式关机。通过将维持能量存储在高于总线电压的水平,电容容量可减少多达 80%,从而降低解决方案的尺寸和成本,同时提高可靠性。
通常需要一个复杂的电子电路来提升输入电压,在断电期间将其与降压输入端进行多路复用,并将其降压至 3.3V 或 5V 以供负载使用。
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| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| WQFN (RVC) | 20 | Ultra Librarian |
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