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SN74ABT125

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具有 TTL 兼容型 CMOS 输入和三态输出的 4 通道、4.5V 至 5.5V 缓冲器

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数据表

SN74ABT125

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产品详情

Technology family ABT Number of channels 4 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Catalog Operating temperature range (°C) -40 to 85
Technology family ABT Number of channels 4 IOL (max) (mA) 64 Supply current (max) (µA) 30000 IOH (max) (mA) -32 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Catalog Operating temperature range (°C) -40 to 85
VQFN (RGY) 14 12.25 mm² (3.5 mm × 3.5 mm) TSSOP (PW) 14 32 mm² (5 mm × 6.4 mm) SOP (NS) 14 79.56 mm² (10.2 mm × 7.8 mm) SSOP (DB) 14 48.36 mm² (6.2 mm × 7.8 mm) SOIC (D) 14 51.9 mm² (8.65 mm × 6 mm) PDIP (N) 14 181.42 mm² (19.3 mm × 9.4 mm)
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff and Power-Up 3-State Support Hot Insertion
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff and Power-Up 3-State Support Hot Insertion
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

The ’ABT125 quadruple bus buffer gates feature independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE)\ input is high.

These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The ’ABT125 quadruple bus buffer gates feature independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE)\ input is high.

These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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* 数据表 SN54ABT125, SN74ABT125 数据表 (Rev. I) 2002-10-30

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评估板

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仿真模型

HSPICE Model of SN74ABT125

SCEJ184.ZIP (118 KB) - HSpice 模型
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仿真模型

SN74ABT125 Behavioral SPICE Model

SCBM157.ZIP (7 KB) - PSpice 模型
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仿真模型

SN74ABT125 IBIS Model (Rev. C)

SCBM001A (45 KB) - IBIS 模型
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封装 引脚 CAD 符号、封装和 3D 模型
VQFN (RGY) 14 Ultra Librarian
TSSOP (PW) 14 Ultra Librarian
SOP (NS) 14 Ultra Librarian
SSOP (DB) 14 Ultra Librarian
SOIC (D) 14 Ultra Librarian
PDIP (N) 14 Ultra Librarian
适用于评估类项目的 TI 标准条款与条件。

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