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UCC5304

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增强型 4A/6A 单通道隔离式栅极驱动器

产品详情

Number of channels 1 Isolation rating Reinforced Power switch GaNFET, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features High CMTI Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1500 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5
Number of channels 1 Isolation rating Reinforced Power switch GaNFET, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features High CMTI Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1500 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5
SOIC (DWV) 8 67.275 mm² (5.85 mm × 11.5 mm)
  • Reinforced isolation
  • Single channel in DWV Package with 8.5-mm creepage distance
  • CMTI greater than 100-V/ns
  • 4-A peak source, 6-A peak sink output
  • Switching parameters:
    • 40-ns maximum propagation delay
    • 5-ns maximum delay matching
    • 5.5-ns maximum pulse-width distortion
    • 35-µs maximum VDD power-up delay
  • Up to 18-V VDD output drive supply
    • 5-V VDD UVLO
  • Operating temp. range (TA) –40°C to 125°C
  • Rejects input pulses shorter than 5-ns
  • TTL and CMOS compatible inputs
  • Reinforced isolation
  • Single channel in DWV Package with 8.5-mm creepage distance
  • CMTI greater than 100-V/ns
  • 4-A peak source, 6-A peak sink output
  • Switching parameters:
    • 40-ns maximum propagation delay
    • 5-ns maximum delay matching
    • 5.5-ns maximum pulse-width distortion
    • 35-µs maximum VDD power-up delay
  • Up to 18-V VDD output drive supply
    • 5-V VDD UVLO
  • Operating temp. range (TA) –40°C to 125°C
  • Rejects input pulses shorter than 5-ns
  • TTL and CMOS compatible inputs

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI).

The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.

With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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评估板

UCC28781EVM-053 — 适用于 UCC28781-Q1 汽车类 500Vdc 输入 ZVS 反激式电源应用的评估模块

UCC28781EMV-053 展示了采用零电压开关反激式 (ZVSF) 控制器的高效率、高密度、高电压汽车偏置电源,具有 60W、15V 输出。 UCC28781-Q1 直接驱动初级侧硅 MOSFET,并通过 UCC5304 隔离式栅极驱动器驱动次级侧同步整流器,用于提高效率并实现 ZVS。

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评估板

UCC5304EVM-035 — UCC5304 单通道隔离式栅极驱动器评估模块

UCC5304EVM 适用于评估 UCC5304,后者是一种具备 4A 峰值拉电流和 6A 峰值灌电流能力的隔离式单通道栅极驱动器。此 EVM 可用作功率 MOSFET 的驱动参考设计,具备高达 18V 的驱动电压、UCC5304 引脚功能识别、组件选择指南以及 PCB 布局示例。
用户指南: PDF
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仿真模型

SIMPLIS Model for UCC5304

SLUM722.ZIP (25 KB) - SIMPLIS 模型
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参考设计

PMP22322 — 65W USB Type-C® ZVS 反激式参考设计

此参考设计是一款低成本、高密度 USB 适配器,在 ZVS 反激式拓扑中使用了 UCC28782 有源钳位反激式控制器和 UCC5304 隔离式驱动器。输出电压为 20V 时,最大额定功率是 65W,但可调节为 20V/15V/9V/5V 输出电压和 3A 电流。此设计的峰值效率可达 93.4%。平均效率和待机功耗等级符合 DoE VI 级和 CoC 2 级限值。该设计外型紧凑,尺寸仅 44mm × 54mm × 20mm(48cc 开放式框架)。
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参考设计

PMP22495 — 176V 至 264V 交流输入、24V、150W 有源钳位正激式参考设计

此参考设计使用 UCC2897A 有源钳位正向控制器将 176V 至 264V 交流输入转换为 24V 直流输出,最大功率为 150W。UCC5304 隔离式栅极驱动器用于驱动高压钳位 FET。该设计通过二极管整流实现了 > 92% 的效率。次级侧电流检测通过恒流调节环路提供精确的过流保护。该设计通过了 CISPR 32 传导辐射测试。

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封装 引脚 CAD 符号、封装和 3D 模型
SOIC (DWV) 8 Ultra Librarian

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