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TXS0206-29

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具有 ESD 保护、EMI 滤波和 2.9V LDO 的 MMC、SD 卡、MemoryStick 电压转换

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数据表

TXS0206-29

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产品详情

Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YFP) 20 3.96 mm² 1.8 x 2.2
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.
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类型 标题 下载最新的英语版本 日期
* 数据表 TXS0206-29 MMC, SD Card, Memory Stick(TM) Voltage-Translation Transceiver 数据表 2009年 12月 2日
应用手册 原理图检查清单 - 使用自动双向转换器进行设计的指南 PDF | HTML 英语版 PDF | HTML 2024年 12月 3日
应用手册 Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日
应用手册 了解 CMOS 输出缓冲器中的瞬态驱动强度与直流驱动强度 PDF | HTML 最新英语版本 (Rev.A) PDF | HTML 2024年 5月 15日
应用手册 SDIO 的电压转换 PDF | HTML 英语版 PDF | HTML 2022年 5月 19日
选择指南 Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日

设计和开发

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仿真模型

TXS0206-29 IBIS Model

SCEM564.ZIP (139 KB) - IBIS Model
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封装 引脚 CAD 符号、封装和 3D 模型
DSBGA (YFP) 20 Ultra Librarian
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

支持和培训

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