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TXS0206-29

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具有 ESD 保护、EMI 滤波和 2.9V LDO 的 MMC、SD 卡、MemoryStick 电压转换

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数据表

TXS0206-29

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产品详情

Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YFP) 20 3.96 mm² (— mm × — mm)
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.
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* 数据表 TXS0206-29 MMC, SD Card, Memory Stick(TM) Voltage-Translation Transceiver 数据表 2009-12-2
应用手册 原理图检查清单 - 使用自动双向转换器进行设计的指南 PDF | HTML 英语版 PDF | HTML 2024-12-3
应用手册 Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024-7-3
应用手册 SDIO 的电压转换 PDF | HTML 英语版 PDF | HTML 2022-5-19
选择指南 Voltage Translation Buying Guide (Rev. A) 2021-4-15

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仿真模型

TXS0206-29 IBIS Model

SCEM564.ZIP (139 KB) - IBIS 模型
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