产品详情

Technology family AUP Supply voltage (min) (V) 0.8 Supply voltage (max) (V) 3.6 Number of channels 1 IOL (max) (mA) 4 Supply current (max) (µA) 0.9 IOH (max) (mA) -4 Input type Standard CMOS Output type Push-Pull Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) -40 to 85
Technology family AUP Supply voltage (min) (V) 0.8 Supply voltage (max) (V) 3.6 Number of channels 1 IOL (max) (mA) 4 Supply current (max) (µA) 0.9 IOH (max) (mA) -4 Input type Standard CMOS Output type Push-Pull Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YFP) 4 1 mm² 1 x 1 DSBGA (YZP) 5 2.1875 mm² 1.75 x 1.25 SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8 SOT-5X3 (DRL) 5 2.56 mm² 1.6 x 1.6 SOT-SC70 (DCK) 5 4.2 mm² 2 x 2.1 USON (DRY) 6 1.45 mm² 1.45 x 1 X2SON (DPW) 5 0.64 mm² 0.8 x 0.8 X2SON (DSF) 6 1 mm² 1 x 1
  • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
  • Low Static-Power Consumption;
    ICC = 0.9 μA Max
  • Low Dynamic-Power Consumption;
    Cpd = 4.1 pF Typ at 3.3 V
  • Low Input Capacitance; Ci = 1.5 pF Typ
  • Low Noise - Overshoot and Undershoot < 10% of VCC
  • Ioff Supports Live Insertion, Partial Power Down Mode, and Back Drive Protection
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input
    (Vhys = 250 mV Typ at 3.3 V)
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode
    Signal Operation
  • tpd = 4.1 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
  • Low Static-Power Consumption;
    ICC = 0.9 μA Max
  • Low Dynamic-Power Consumption;
    Cpd = 4.1 pF Typ at 3.3 V
  • Low Input Capacitance; Ci = 1.5 pF Typ
  • Low Noise - Overshoot and Undershoot < 10% of VCC
  • Ioff Supports Live Insertion, Partial Power Down Mode, and Back Drive Protection
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input
    (Vhys = 250 mV Typ at 3.3 V)
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode
    Signal Operation
  • tpd = 4.1 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

This single buffer gate performs the Boolean function Y = A in positive logic.

This single buffer gate performs the Boolean function Y = A in positive logic.

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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 SN74AUP1G34 Low-Power Single Buffer Gate 数据表 (Rev. K) PDF | HTML 2016年 8月 30日
选择指南 Logic Guide (Rev. AC) PDF | HTML 2025年 11月 13日
应用简报 了解施密特触发器 (Rev. B) PDF | HTML 英语版 (Rev.B) PDF | HTML 2025年 5月 5日
选择指南 Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
应用手册 Designing and Manufacturing with TI's X2SON Packages 2017年 8月 23日
应用手册 How to Select Little Logic (Rev. A) 2016年 7月 26日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AC) PDF | HTML 2014年 11月 17日
选择指南 小尺寸逻辑器件指南 (Rev. E) 最新英语版本 (Rev.G) 2012年 7月 16日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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