ZHCSXI8H March 2010 – December 2024 CSD17510Q5A
PRODUCTION DATA
| 参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | ||
|---|---|---|---|---|---|---|---|
| 静态特性 | |||||||
| BVDSS | 漏源极电压 | VGS = 0V，IDS = 250μA | 30 | V | |||
| IDSS | 漏源漏电流 | VGS = 0V，VDS = 24V | 1 | μA | |||
| IGSS | 栅源漏电流 | VDS = 0V，VGS = 20V | 100 | nA | |||
| VGS(th) | 栅源阈值电压 | VDS = VGSIDS = 250μA | 1 | 1.5 | 2.1 | V | |
| RDS(on) | 漏源导通电阻 | VGS = 4.5V，IDS = 20A | 5.4 | 7.3 | mΩ | ||
| VGS = 10V，IDS = 20A | 4.1 | 5.2 | mΩ | ||||
| gfs | 跨导 | VDS = 15V，IDS = 20A | 59 | S | |||
| 动态特性 | |||||||
| Ciss | 输入电容 | VGS = 0V，VDS = 15V， ƒ = 1MHz | 960 | 1250 | pF | ||
| Coss | 输出电容 | 630 | 820 | pF | |||
| Crss | 反向传输电容 | 51 | 66 | pF | |||
| RG | 串联栅极电阻 | 0.85 | 1.7 | Ω | |||
| Qg | 栅极电荷总量 (4.5V) | VDS = 15V，IDS = 20A | 6.4 | 8.3 | nC | ||
| Qgd | 栅漏栅极电荷 | 1.9 | nC | ||||
| Qgs | 栅源栅极电荷 | 2.7 | nC | ||||
| Qg(th) | Vth 下的栅极电荷 | 1.5 | nC | ||||
| Qoss | 输出电荷 | VDS = 13.5V，VGS = 0V | 16 | nC | |||
| td(on) | 导通延时时间 | VDS = 15V，VGS = 4.5V， IDS = 20A，RG = 2Ω | 7 | ns | |||
| tr | 上升时间 | 11 | ns | ||||
| td(off) | 关断延迟时间 | 9 | ns | ||||
| tf | 下降时间 | 4.1 | ns | ||||
| 二极管特性 | |||||||
| VSD | 二极管正向电压 | ISD = 20A，VGS = 0V | 0.85 | 1 | V | ||
| Qrr | 反向恢复电荷 | VDD= 13.5V，IF = 20A，di/dt = 300A/μs | 25 | nC | |||
| trr | 反向恢复时间 | 24 | ns | ||||