ZHCSQ77B
February 2023 – June 2024
TPS25948
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Device Comparison Table
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Timing Requirements
6.7
Switching Characteristics
6.8
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Undervoltage Lockout (UVLO and UVP)
7.3.2
Overvoltage Lockout (OVLO)
7.3.3
Inrush Current, Overcurrent, and Short Circuit Protection
7.3.3.1
Slew Rate (dVdt) and Inrush Current Control
7.3.3.2
Active Current Limiting
7.3.3.3
Short-Circuit Protection
7.3.4
Analog Load Current Monitor
7.3.5
Reverse Current Protection
7.3.6
Overtemperature Protection (OTP)
7.3.7
Fault Response and Indication (FLT)
7.3.8
Supply Good Indication (SPLYGD/SPLYGD)
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Single Device, Self-Controlled
8.3
Typical Application
8.3.1
Design Requirements
8.3.2
Detailed Design Procedure
8.3.2.1
Setting Overvoltage Threshold
8.3.2.2
Setting Output Voltage Rise Time (tR)
8.3.2.3
Setting Overcurrent Threshold (ILIM)
8.3.2.4
Setting Overcurrent Blanking Interval (tITIMER)
8.3.3
Application Curves
8.4
Active ORing
8.5
Priority Power MUXing
8.6
Parallel Operation
8.7
USB PD Port Protection
8.8
Power Supply Recommendations
8.8.1
Transient Protection
8.8.2
Output Short-Circuit Measurements
8.9
Layout
8.9.1
Layout Guidelines
8.9.2
Layout Example
9
Device and Documentation Support
9.1
Documentation Support
9.1.1
Related Documentation
9.2
接收文档更新通知
9.3
支持资源
9.4
Trademarks
9.5
静电放电警告
9.6
术语表
10
Revision History
11
Mechanical, Packaging, and Orderable Information
9.5
静电放电警告
静电放电 (ESD) 会损坏这个集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。