ZHCSI18B April 2018 – May 2025 OPA858
PRODUCTION DATA
测试条件:VS+ = 2.5V、VS– = –2.5V、VIN+ = 0V、RF = 453Ω、增益 = 7V/V、RL = 200Ω、输出负载以 1/2Vs 为基准并且 TA = 25°C(除非另有说明)

| VOUT = 100 mVPP |

| VOUT = 2 VPP |

| 微小信号响应 |



| VOUT = 2 VPP |

| VOUT = 2 VPP |

| 平均上升和下降时间 (10%–90%) = 450ps |


| VS+ = 5V,VS– = 接地 |

| 微小信号响应 |

| 2 个典型芯片 |

| 已测试 30 个芯片 |

| µ = 1µV/°C | σ = 2.2µV/°C | 已测试 28 个芯片 |

| VS = 5V | 3 个典型芯片 |

| VS = 3.3V | 3 个典型芯片 |



| µ= -0.28mV | σ = 0.8 mV | 已测试 4555 个芯片 |

| VOUT = 100 mVPP | ||

| VOUT = 100 mVPP |

| VOUT = 2 VPP |

| VS = 3.3V | VOUT = 1 VPP |

| 微小信号响应 |

| 频率 = 10MHz |


| VOUT = 2 VPP |

| VOUT = 2 VPP |

| 平均上升和下降时间 (10%–90%) = 750ps |

| 2 × 输出过驱 |

| VS+ = 5V,VS– = 接地 |

| 微小信号响应 |

| 2 个典型芯片 |

| 3 个典型芯片 |

| VS = 3.3V | 3 个典型芯片 |


| VS = 5V | 3 个典型芯片 |

| 3 个典型芯片 |

| µ= 20.35mA | σ= 0.2mA | 已测试 4555 个芯片 |

| µ= –0.1pA | σ = 0.39pA | 已测试 4555 个芯片 |