SLVK312 July   2026 DAC39RF10-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Single-Event Latch-Up (SEL) Results
  10. 7Single-Event Functional Interrupt (SEFI) Results
    1. 7.1 Converter Performance and Digital (DUC + JESD204C Link) Tolerance
    2. 7.2 Configuration Register Hardness
    3. 7.3 SPI Programming During Irradiation
  11. 8SEU Results
    1. 8.1 JESD204C Link Monitoring Results
    2. 8.2 Digital Up-Converter and NCO Upset Recovery
    3. 8.3 Estimating Upset Rates in Unprotected Data Paths
    4. 8.4 Event Rate Calculations
    5. 8.5 Summary of Radiation Tolerance
  12. 9References
  13.   A Appendix: Recommendations for Hi-Rel Systems
    1.     A.1 Summary of Rad-Hard Design Features
    2.     A.2 SPI Programming
    3.     A.3 JESD204C Reliability
    4.     A.4 Equalizer Usage in Radiation Environments
    5.     A.5 NCO Reliability
    6.     A.6 NCO Frequency and Phase Correction (Strategy #1)
    7.     A.7 NCO Frequency Correction (Strategy #2)
    8.     A.8 NCO Self-Sync/Self-Coherent Mode (Strategy #3)

1 Introduction

The DAC39RFx10-SEP is a radiation-tolerant (RT) RF-sampling, multi-Nyquist, digital-to-analog converter (DAC) that can directly synthesize frequencies from DC to above 12GHz. The device can be used as a non-interpolating or interpolating DAC for either direct RF-sampling or complex baseband signal generation. The maximum input data rate is 20.8GSPS for a single channel or 10.4GSPS for two channels. The device can generate signals of up to 10GHz, 7.5GHz, and 5GHz signal bandwidth (8-bit, 12-bit, and 16-bit input resolution) at carrier frequencies exceeding 12GHz, enabling direct sampling beyond X-band. The DAC39RFx10-SEP also has the lowest additive phase and amplitude noise versus any space-grade DAC in the industry.
Table 1-1 Overview Information
DescriptionDevice Information
Generic part numberDAC39RF10-SEP

DAC39RFS10-SEP

Orderable part numberDAC39RF10ACLNSP

DAC39RFS10ACLNSP

Device functionRF-sampling digital-to-analog converter
Device package256-pin ACL FCBGA (17mm × 17mm)
TechnologyTI C014.P CMOS 40nm
Exposure facilityRadiation Effects Facility Cyclotron Institute, Texas A&M University (15MeV/nucleon)
Heavy ion fluence per runUp to 1 × 107ions/cm2
Irradiation junction temperature125°C (SEL); Ambient temp (SEFI/SEU)