SLVK282 April   2026 ISOS510-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Test Setup and Procedures
  9. 6 Single-Event Latch-up (SEL) Results
  10. 7 Single-Event Transients (SET) Results
  11. 8 Event Rate Calculations
  12. 9 Summary
  13. 10References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the ISOS510-SEP, current-driven analog isolator with transistor output. Heavy-ions with LETEFF of 47MeV×cm2/mg was used to irradiate seven production devices. Flux of 105 ions×cm2/s and fluence of 1 × 107 – 1.5 × 107ions/cm2 per run were used for the characterization. The results demonstrated that the ISOS510-SEP is SEL-free up to 47MeV×cm2/mg at T = 125°C. SET transient performance for output voltage excursions ≥|3%| and |5%| from the nominal voltage are presented and discussed.