SLVK222 August   2025 TPS7H5020-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

1 Introduction

The TPS7H502X-SP is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502X-SP integrates several key functions such as:

  • Soft-start, enable, and adjustable slope compensation
  • 0.6V ±1% voltage reference tolerance
  • Internal oscillator through the RT pin or external frequency control through the SYNC pin
  • Switching frequencies up to 1MHz
  • Input voltage range from 4.5V to 14V
  • Programmable VLDO voltage (4.5V to 5.5V) that can be connected directly to driver stage input (PVIN) for operation with GaN FETs

The TPS7H5020 has a maximum duty cycle of 100% while the TPS7H5021 has a maximum duty cycle of 50%. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The device is offered in a 24-pin plastic package. General device information and test conditions are listed in the overview information table. For more detailed technical specifications, user-guides, and application notes please go to device product page.

Table 1-1 Overview Information
DESCRIPTION(1) DEVICE INFORMATION
TI Part Number TPS7H502X-SP
Orderable Part Number

5962R2420101PYE (TPS7H5020-SP) or 5962R420102PYE (TPS7H5021-SP)
Device Function

PWM Controller with Integrated Gate Driver
Technology LBC7 (Linear BiCMOS 7)
Exposure Facility Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV/nucleon)

and Facility for Rare Istotope Beams, K500 Cyclotron (KSEE), Michigan State University (19.5MeV/nucleon)
Heavy Ion Fluence per Run 1.00 × 107 ions/cm2
Irradiation Temperature 25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
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