SLVK181 January   2025 DRV8351-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB)
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.2 Single-Event Burnout (SEB)

During the SEB characterization, the device was tested at room temperature of approximately 25°C. The device was tested with INL = 5V and INH = 0V. For the SEB-OFF mode the the device did exhibit some cross conduction, as well as GL dropping to zero volts and then recovering.

The species used for the SEB testing was Silver (109Ag at 15MeV / nucleon). For the 109Ag ion an angle of incidence of 0° was used to achieve an LETEFF = 47.2MeV × cm2 / mg (for more details, see Ion LETEFF, Depth, and Range in Silicon). The kinetic energy in the vacuum for this ion is 1.634 GeV (15-MeV / amu line). Flux of approximately 105 ions / cm2 × s and a fluence of approximately 107 ions / cm2 was used for the run. Run duration to achieve this fluence was approximately 100 seconds. The DRV8351-SEP was powered with PVDD = 40V, GVDD = 15V. The inputs were biased such that the low side inputs were held at 5V while the high side inputs were tied to ground, this maintained that the bootstrap capacitor were charged. The goal was to look for transients on either GH or GL for unexpected behavior. It was observed that we had cross conduction events similar to our SET results. Additionally it was seen that the low side GL would drop down to ~2V then recovering back to nominal value.Summary of DRV8351-SEP SEB Test Condition and Results shows the SEB/SEGR test conditions and results.

Table 7-2 Summary of DRV8351-SEP SEB Test Condition and Results

Device

Board Number

Run

Number

IonLETEFF (MeV × cm2 / mg)Flux (ions × cm2/ mg)Fluence (number of ions)Input

Bias

Phase

GVDD

PVDD

Number

of Transients GL

Number of Transients GH

DRV8351-SEP

7

12

109Ag

47.2

1.04E5

1E7

INLx = 5V | INHx = 0V

A

15

42.5

127

97

DRV8351-SEP

8

14

109Ag47.2

1.02E5

9.95E6

INLx = 5V | INHx = 0V

B

1542.5

30

117

DRV8351-SEP

9

16

109Ag47.2

1.04E5

1.04E5

INLx = 5V | INHx = 0V

C

1542.5

38

93

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations, the upper-bound cross-section (using a 95% confidence level) is calculated as:

Equation 2. σSEB≤ 1.23 x 10-7 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 25°C
DRV8351 SEB on Run 14 (INH = 0V, INL = 5V) | GVDDFigure 7-5 SEB on Run 14 (INH = 0V, INL = 5V) | GVDD
DRV8351 SEB on Run 14 (INH = 0V, INL = 5V) | PVDDFigure 7-6 SEB on Run 14 (INH = 0V, INL = 5V) | PVDD
DRV8351 SEB On Run 12 (INH = 0V, INL = 5V) | GVDDFigure 7-7 SEB On Run 12 (INH = 0V, INL = 5V) | GVDD
DRV8351 SEB On Run 12 (INH = 0V, INL = 5V) | PVDDFigure 7-8 SEB On Run 12 (INH = 0V, INL = 5V) | PVDD