SLVK181 January   2025 DRV8351-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB)
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

8 Single-Event Transients (SET)

The primary focus of SETs were heavy-ion-induced transient upsets on the output signals GH,GL, and SH. SET testing was done at room temperature across three ion species, 109Ag, 84Kr , and 63Cu which produced a range of LETEFF of 20.3 to 47.2MeV × cm2 / mg for more details, see Ion LETEFF, Depth, and Range in Silicon. GH, GL, and SH were monitored by a single scope, a NI PXIe-5172. Additionally a NI PXIe-5110 was monitoring SH. During PWM, the PXIe 5172 was configured to trigger based on an outside window width measurement. As for the PXIe 5110, the pulse width trigger for the output signal was 10%. The window for the 5172 was set to trigger on GL, if it went +/- 2V out of it's expected switching condition this would be counted as a trigger. As for the 5110, if the pulse width was +/- 10% off from the expected pulse width, this would be counted as a trigger.

Table 8-1 Scope Settings
Scope ModelTrigger SignalTrigger TypeTrigger ValueRecord LengthSample Rate
PXIe-5172GLWindow±2V400020MS / s
PXIe-5110

SH

Pulse Width± 10%

4000

20MS / s
Table 8-2 Summary of DRV8351-SEP SET Test Condition and Results
Device

Board

Number		Run Number

Ion

LETEFF (MeV × cm2 / mg)Flux (ions × cm2/ mg)Fluence (number of ions)FrequencyPhaseGVDDPVDD

Number of Transients GL

Number of Transients

SH

DRV8351-SEP

7

10

Ag

47.2

1E5

1E7

20kHz

A

15

42.5

72

14

DRV8351-SEP

8

13

Ag47.21E51E720kHz

B

15

42.5

22

65

DRV8351-SEP

9

15

Ag47.21E51E720kHz

C

15

42.5

16

46

DRV8351-SEP

11

22

Ag47.2

1.1E5

1E7

200kHz

A

15

42.5

51

50

DRV8351-SEP

10

18

Ag47.2

8.4E4

1E7200kHz

B

15

42.5

60

49

DRV8351-SEP

9

17

Ag47.2

9.66E4

9.96E6

200kHz

C

15

42.5

161

69

DRV8351-SEP

4

11

Kr

30.6

9.76E4

1E7

20kHz

A

13

30

54

10

DRV8351-SEP

4

14

Kr30.6

1.1E5

1E720kHz

A

10

20

145

90

DRV8351-SEP

4

16

Kr30.6

1.01E5

1E720kHz

A

10

10

158

60

DRV8351-SEP

8

18

Cu

20.3

1.07E5

1E720kHz

A

13

30

84

16

DRV8351-SEP

8

19

Cu

20.31.07E51E720kHz

A

10

20

120

84

DRV8351-SEP

8

20

Cu

20.3

1.12E5

1E720kHz

A

10

45

118

109

DRV8351 Cross Conduction SET Run 9 Zoomed Out (fsw = 20kHz) 47.2MeVFigure 8-1 Cross Conduction SET Run 9 Zoomed Out (fsw = 20kHz) 47.2MeV
DRV8351 Cross Conduction SET Run 9 Zoomed in 1 (fsw = 20kHz) 47.2MeVFigure 8-2 Cross Conduction SET Run 9 Zoomed in 1 (fsw = 20kHz) 47.2MeV
DRV8351 Cross Conduction SET Run 9 Zoomed in 2 (fsw = 20kHz) 47.2MeVFigure 8-3 Cross Conduction SET Run 9 Zoomed in 2 (fsw = 20kHz) 47.2MeV