SLVK181 January   2025 DRV8351-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB)
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Device and Test Board Information

The DRV8351-SEP is packaged in a 20-pin plastic package as shown in Figure 3-1. A DRV8351-SEP evaluation board made specifically for radiation testing was used to evaluate the performance and characteristics of the DRV8351-SEP under heavy ion radiation. The DRV8351-SEP evaluation board is shown in Figure 3-1. The board schematic is shown in Figure 3-3. Red X represents not populated

The package was delidded to reveal the die face for all heavy-ion testing.

DRV8351 Photograph of Delidded DRV8351-SEPFigure 3-1 Photograph of Delidded DRV8351-SEP
DRV8351 Pinout DiagramFigure 3-2 Pinout Diagram
DRV8351 DRV8351-SEP Evaluation Board Schematics - DeviceFigure 3-3 DRV8351-SEP Evaluation Board Schematics - Device
DRV8351 DRV8351-SEP Evaluation Board Schematics - Power StageFigure 3-4 DRV8351-SEP Evaluation Board Schematics - Power Stage
DRV8351 DRV8351-SEP Evaluation Board Schematics - Sense Feedback/USB2ANYFigure 3-5 DRV8351-SEP Evaluation Board Schematics - Sense Feedback/USB2ANY
DRV8351 DRV8351-SEP Evaluation Board Schematics - Input PowerFigure 3-6 DRV8351-SEP Evaluation Board Schematics - Input Power