SLVK117 October   2022 TPS7H2221-SEP

 

  1.   Single-Event Effects Test Report of the TPS7H2221-SEP Load Switch
  2.   Trademarks
  3. 1 Introduction
  4. 2 Single-Event Effects (SEE)
  5. 3 Device and Test Board Information
  6. 4 Irradiation Facility and Setup
  7. 5 Depth, Range and LETEFF Calculation
  8. 6 Test Setup and Procedures
  9. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  10. 8 Single-Event Transients (SET) and Single Event Functional Interrupt (SEFI)
    1. 8.1 Single Event Transient (SET)
    2. 8.2 Single Event Functional Interrupt (SEFI)
  11. 9 Event Rate Calculations
  12. 10Summary
  13.   A Appendix: Total Ionizing Dose from SEE Experiments
  14.   B Appendix: References

6 Test Setup and Procedures

SEE testing was performed on a TPS7H2221-SEP device mounted on a two-site (U1 and U2) EVM designed for the device and modified specifically for radiation testing. The device power was provided using the J1 (VIN) and J3 (GND) inputs for U1 and the J8 (VIN) and J10 (GND) for U2 with the N6766A and N6765A PS Module, respectively, mounted on a N6705 precision power supply. A combination of a 4.4 Ω power resistor and a Chroma E-Load in constant resistance (CR) mode was used to load the device using J2 (VOUT) and J4 (GND) for U1 and J9 (VOUT) and J11 (GND) for U2.

For SEL, SEB, and SEGR testing, the device was powered up to an operating voltage of 5.5-V and loaded to 1.25-A with the 4.4 Ω power resistor or the Chroma E-Load.

For the SEB/SEGR characterization, the device was tested under enabled and disabled modes. The device was disabled by using the TP5 and TP10 (ON) pins for U1 and U2, forcing 0 V using a PXIe-4139. The power resistor was connected even when the device was disabled to help differentiate if an SET momentarily activated the device under the heavy-ion irradiation. During the SEB/SEGR testing with the device in disabled mode, not a single VOUT transient or input current event was observed.

For the SET characterization, the device was powered up in the following configurations:

  • VIN = 1.8-V, IOUT = 0.1-A

  • VIN = 1.8-V, IOUT = 0.5-A

  • VIN = 3.3-V, IOUT = 0.1-A
  • VIN = 3.3-V, IOUT = 1.25-A
  • VIN = 5-V, IOUT = 0.1-A
  • VIN = 5-V, IOUT = 1.25-A

The SET events were monitored using a National Instruments™ (NI) PXIe-5172 scope card. The scope was used to monitor and trigger from VOUT, using a window trigger around ±3% from the nominal output voltage. The scope was mounted on a NI PXIe-1095 chassis.

All equipment was controlled and monitored using a custom-developed LabVIEW™ program (PXI-RadTest) running on a HP-Z4™ desktop computer. The computer communicates with the PXI chassis via an MXI controller and NI PXIe-8381 remote control module.

Figure 6-1 shows a block diagram of the setup used for SEE testing of the TPS7H2221-SEP. Table 6-1 shows the connections, limits, and compliance values used during the testing. A die temperature of 125°C was used for SEL. For the SEB/SEGR and SET characterization, the devices were tested at room temperature (no cooling or heating was applied to the DUT). The die temperature was verified using a IR-camera before the exposure to heavy ions.

Table 6-1 Equipment Set and Parameters Used for SEE Testing the TPS7H2221-SEP

For the Chroma E-Load "High Range" in the compliance column refers to the mode that the chroma was in during testing, not necessarily a current compliance.

PIN NAMEEQUIPMENT USEDCAPABILITYCOMPLIANCERANGE OF VALUES USED
VIN1Agilent N6766A PS17 A10 A1.6-V to 5.5-V

VIN2

Agilent N6765A PS

50 A

10 A

1.6-V to 5.5-V

EN1/2

PXIe-4139

3 A

0.1 A

1.6-V to 5-V

Oscilloscope Card on VOUTNI-PXIe 5172100 MS/s—2.5 MS/s
Chroma E-Load on VOUTE36300-80-6080 AHigh Range0.1-A to 1.5-A

All boards used for SEE testing were fully checked for functionality. Dry runs were also performed to ensure that the test system was stable under all bias and load conditions prior to being taken to the TAMU facility. During the heavy-ion testing, the LabVIEW control program powered up the TPS7H2221-SEP device and set the external sourcing and monitoring functions of the external equipment. After functionality and stability were confirmed, the beam shutter was opened to expose the device to the heavy-ion beam. The shutter remained open until the target fluence was achieved (determined by external detectors and counters). During irradiation, the NI scope cards continuously monitored the signals. When the output voltage exceeded the pre-defined ±3% window trigger a data capture was initiated. In addition to monitoring the output voltage, VIN current and the +5-V (beam shutter ON/OFF) signal from TAMU were monitored at all times. No sudden increases in current were observed (outside of normal fluctuations) on any of the test runs and indicated that no SEL or SEB/SEGR events occurred during any of the tests.

Figure 6-1 Block Diagram of SEE Test Setup With the TPS7H2221-SEP.

Although there were two sites on the radiation test board, only 1 device was tested at a time, this block diagram represents this.