SLVK086A january   2022  – may 2023 TPS7H4003-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H4003-SEP Synchronous Step-Down Converter
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Depth, Range, and LETEFF Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A Appendix: Total Ionizing Dose From SEE Experiments
  15.   B Appendix: References
  16.   C Revision History

Appendix: References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. G. H. Johnson, J. H. Hohl, R. D. Schrimpf and K. F. Galloway, "Simulating single-event burnout of n-channel power MOSFET's," in IEEE Transactions on Electron Devices, vol. 40, no. 5, pp. 1001-1008, May 1993.
  4. J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway,J. L. Titus and C. F. Wheatley, "A conceptual model of a single-event gate-rupture in power MOSFETs," in IEEE Transactions on Nuclear Science, vol. 40, no. 6, pp. 1959-1966, Dec. 1993.
  5. G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga,“Temperature dependence of single event burnout in n-channel power MOSFETs [for space application],” IEEE Trans. Nucl. Sci., 39(6), Dec. 1992, pp.1605-1612.
  6. TAMU Radiation Effects Facility, TAMU Radiation Effects Facility , website.
  7. The Stopping and Range of Ions in Matter (SRIM) software simulation tools, website.
  8. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  9. ISDE CRÈME -MC, web page.
  10. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  11. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.