SLVK033A February   2019  – August 2021 INA240-SEP

 

  1.   Trademarks
  2. 1Device Information
    1. 1.1 Device Details
  3. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Biased
    4. 2.4 Test Configuration and Condition
  4. 3Tested Parameters
  5. 4Total Ionizing Dose (RHA) Characterization Test Results
    1. 4.1 Offset Voltage
    2. 4.2 Gain Error
  6.   A Total Ionizing Dose HDR Report
  7.   B Revision History

2.4 Test Configuration and Condition

A step-stress (3k, 10k, 20k, and 30k) test method was used to determine the TID hardness level. That is, after a predetermined TID level was reached, an electrical test was performed on a given sample of parts to verify that the units are within specified data sheet electrical test limits. From initial feasibility studies the difference between pre and post irradiation was greater for samples that were biased, hence for RLAT 22 sample units were used at the 20-krad(Si) dose level with biased setup conditions and this will be repeated for each wafer lot.

Table 2-1 list the serialized samples used for RHA characterization.

Table 2-1 HDR = 78 rad(Si)/s Biased Device Information
HDR = 78 rad(Si)/s
Total Samples: 37
Exposure Levels
3 krad(Si) 10 krad(Si) 20 krad(Si) 30 krad(Si)
Biased Biased Biased Biased
001, 002, 003, 004, 005 006, 007, 008, 009, 010 011, 012, 013, 014, 015,
016, 017, 018, 019, 020,
021, 022, 023, 024, 025,
026, 027, 028, 029, 030,
031, 032		 033, 034, 035, 036, 037