SLUUCA6 October   2021 BQ27Z746

 

  1. 1 Read This First
    1. 1.1 About This Manual
    2. 1.1 Notational Conventions
    3. 1.1 Battery Notational Conventions
    4. 1.1 Trademarks
    5. 1.1 Glossary
  2. 1 Introduction
  3. 2 IO Options
    1. 2.1 Configuration of the GPO Pin
  4. 3 Basic Measurement System
    1. 3.1 Introduction
    2. 3.2 Current and Coulomb Counting
    3. 3.3 Voltage
      1. 3.3.1 Cell Voltage
      2. 3.3.2 Pack Voltage
    4. 3.4 Temperature
      1. 3.4.1 Internal Temperature
      2. 3.4.2 Cell Temperature
      3. 3.4.3 Optional Second Temperature Sensor
      4. 3.4.4 Temperature Configuration
  5. 4 Protections
    1. 4.1 Introduction
    2. 4.2 Hardware-Based Protection
      1. 4.2.1 Cell Undervoltage Protection
      2. 4.2.2 Cell Overvoltage Protection
      3. 4.2.3 Overcurrent in Discharge Protection
      4. 4.2.4 Overcurrent in Charge Protection
      5. 4.2.5 Short Circuit in Discharge Protection
      6. 4.2.6 Threshold Targets
    3. 4.3 Firmware Based Protections
      1. 4.3.1  Cell Undervoltage Protection
      2. 4.3.2  Cell Overvoltage Protection
      3. 4.3.3  Overcurrent in Charge Protection
      4. 4.3.4  Overcurrent in Discharge Protection
      5. 4.3.5  Temperature Protections
      6. 4.3.6  Overtemperature in Charge Protection
      7. 4.3.7  Overtemperature in Discharge Protection
      8. 4.3.8  Undertemperature in Charge Protection
      9. 4.3.9  Undertemperature in Discharge Protection
      10. 4.3.10 Precharge Timeout Protection
      11. 4.3.11 Fast Charge Timeout Protection
      12. 4.3.12 Protections Configuration
      13. 4.3.13 FET Options
      14. 4.3.14 Protections Data Flash Values
        1. 4.3.14.1  CUV—Cell Undervoltage
        2. 4.3.14.2  HCUV—Hardware Cell Undervoltage
        3. 4.3.14.3  COV—Cell Overvoltage
        4. 4.3.14.4  HCOV—Hardware Cell Overvoltage
        5. 4.3.14.5  OCC—Overcurrent In Charge
        6. 4.3.14.6  HOCC—Hardware Overcurrent in Charge
        7. 4.3.14.7  OCD—Overcurrent in Discharge
        8. 4.3.14.8  HOCD—Hardware Overcurrent in Discharge
        9. 4.3.14.9  HSCD—Hardware Short Circuit in Discharge
        10. 4.3.14.10 OTC—Overtemperature in Charge
        11. 4.3.14.11 OTD—Overtemperature in Discharge
        12. 4.3.14.12 UTC—Undertemperature in Charge
        13. 4.3.14.13 UTD—Undertemperature in Discharge
  6. 5 Battery Sensing Output
    1. 5.1 Introduction
    2. 5.2 Automatic Mode
      1. 5.2.1 RLO Mode
      2. 5.2.2 RLO Charge Mode
      3. 5.2.3 BUFFER Mode
    3. 5.3 Hardware-Based Protections
  7. 6 Power Modes
    1. 6.1 Introduction
    2. 6.2 NORMAL Mode
    3. 6.3 SLEEP Mode
      1. 6.3.1 Device Sleep
    4. 6.4 SHIP Mode
    5. 6.5 SHELF Mode
    6. 6.6 SHUTDOWN Mode
      1. 6.6.1 Voltage-Based Shutdown
      2. 6.6.2 AltManufacturerAccess() MAC Shutdown
      3. 6.6.3 Time-Based Shutdown
    7. 6.7 Power Modes Configuration
  8. 7 Gauging
    1. 7.1  Impedance Track (IT) Model
    2. 7.2  Thermal Model
    3. 7.3  Gauging Capacities
    4. 7.4  Learning Cycles
    5. 7.5  Impedance Track Configuration
    6. 7.6  Gas Gauge Modes
    7. 7.7  QMax and Ra
      1. 7.7.1 QMax Initial Values
      2. 7.7.2 QMax Update Conditions
        1. 7.7.2.1 Base Required Conditions
        2. 7.7.2.2 Tracking QMax Updates
        3. 7.7.2.3 Relaxed Cell OCV
        4. 7.7.2.4 OCV Prediction
        5. 7.7.2.5 Cycle Count Based QMax Degradation
        6. 7.7.2.6 92
        7. 7.7.2.7 Fast QMax Update Conditions
        8. 7.7.2.8 QMax and Fast QMax Update Boundary Check
      3. 7.7.3 Ra Table Initial Values
        1. 7.7.3.1 R_a0 Table
        2. 7.7.3.2 R_a0x Table
      4. 7.7.4 Ra Table Update Conditions
      5. 7.7.5 Fast Resistance Scaling
        1. 7.7.5.1 Calculation of Resistance Scale
        2. 7.7.5.2 Negative Resistance Scale
        3. 7.7.5.3 Reset of Resistance Scale
        4. 7.7.5.4 Application of Resistance Scale
        5. 7.7.5.5 Fast Resistance Scaling Configuration
    8. 7.8  FullChargeCapacity (FCC), RemainingCapacity (RemCap), and RelativeStateOfCharge (RSOC)
      1. 7.8.1 Smoothing Engine
        1. 7.8.1.1 Smoothing to 0% in DISCHARGE Mode
        2. 7.8.1.2 Smoothing to 100% in CHARGE Mode
        3. 7.8.1.3 Smoothing in RELAX Mode
    9. 7.9  Impedance Track (IT) Configuration Options
    10. 7.10 State-Of-Health (SOH)
    11. 7.11 Battery Trip Point (BTP)
  9. 8 Lifetime Data Collection
    1. 8.1 Description
    2. 8.2 Reset
  10. 9 Host Interrupts
    1. 9.1 Description
    2. 9.2 Voltage and Temperature Interrupts
    3. 9.3 RSOC Interrupts
    4. 9.4 Host Interrupts Configuration
  11. 10Device Security
    1. 10.1 Description
    2. 10.2 SHA-256 Authentication
      1. 10.2.1 Secure Key
      2. 10.2.2 Authentication Flow
    3. 10.3 Security Modes
      1. 10.3.1 SEALING and UNSEALING Data Flash
      2. 10.3.2 SEALED to UNSEALED
      3. 10.3.3 UNSEALED to FULL ACCESS
  12. 11Advanced Charge Algorithm
    1. 11.1  Introduction
    2. 11.2  Charge Temperature Ranges
    3. 11.3  Voltage Range
      1. 11.3.1 RelativeStateofCharge() Range
    4. 11.4  Charging Current
    5. 11.5  Charging Voltage
      1. 11.5.1 Charge Voltage Compensation for System Impedance
    6. 11.6  Charging Degradation Modes
    7. 11.7  Cell Swelling Control (via Charging Voltage Degradation)
    8. 11.8  Valid Charge Termination
    9. 11.9  Charge and Discharge Alarms
    10. 11.10 Terminate Charge and Discharge Alarms
    11. 11.11 Precharge
    12. 11.12 Charge Disable and Discharge Disable
    13. 11.13 Charge Inhibit
    14. 11.14 Charge Suspend
    15. 11.15 Zero Volt Charging (ZVCHG)
  13. 12Communications
    1. 12.1 HDQ Single-Pin Serial Interface
    2. 12.2 I2C Interface
      1. 12.2.1 I2C Clock Frequency
      2. 12.2.2 I2C Time Out
      3. 12.2.3 I2C Command Waiting Time
      4. 12.2.4 I2C Clock Stretching
  14. 13Manufacture Production
    1. 13.1 Manufacture Testing
      1. 13.1.1 Manufacturing Status Configuration
    2. 13.2 I2C Configuration
    3. 13.3 Manufacturer Information Blocks
    4. 13.4 Verification of Data Flash
    5. 13.5 Calibration
  15. 14Calibration
    1. 14.1 Voltage Calibration
      1. 14.1.1 Cell (BAT) Voltage Calibration
      2. 14.1.2 Pack (PACK) Voltage Calibration
      3. 14.1.3 Voltage Calibration Data Flash
    2. 14.2 Current Calibration
      1. 14.2.1 CC Gain/Capacity Gain Calibration
      2. 14.2.2 Deadbands
        1. 14.2.2.1 Current Deadband
        2. 14.2.2.2 Coulomb Counter Deadband
      3. 14.2.3 Current Calibration Data Flash
    3. 14.3 Temperature Calibration
      1. 14.3.1 Internal Temperature Sensor Calibration
      2. 14.3.2 TS Calibration
      3. 14.3.3 Temperature Calibration Data Flash
      4. 14.3.4 Cell Temp Model
      5. 14.3.5 Internal Temp Model
      6. 14.3.6 2nd Temperature Model
  16. 15Data Commands
    1. 15.1 Standard Data Commands
      1. 15.1.1  0x00/01 ManufacturerAccess()/ControlStatus()
      2. 15.1.2  0x02/03 AtRate()
      3. 15.1.3  0x04/05 AtRateTimeToEmpty()
      4. 15.1.4  0x06/07 Temperature()
      5. 15.1.5  0x08/09 Voltage()
      6. 15.1.6  0x0A/0B BatteryStatus()
      7. 15.1.7  0x0C/0D Current()
      8. 15.1.8  0x10/11 RemainingCapacity()
      9. 15.1.9  0x12/13 FullChargeCapacity()
      10. 15.1.10 0x14/15 AverageCurrent()
      11. 15.1.11 0x16/17 AverageTimeToEmpty()
      12. 15.1.12 0x18/19 AverageTimeToFull()
      13. 15.1.13 0x1E/1F MaxLoadCurrent()
      14. 15.1.14 0x20/21 MaxLoadTimeToEmpty()
      15. 15.1.15 0x22/23 AveragePower()
      16. 15.1.16 0x28/29 InternalTemperature()
      17. 15.1.17 0x2A/2B CycleCount()
      18. 15.1.18 0x2C/2D RelativeStateOfCharge()—RSOC
      19. 15.1.19 0x2E/2F StateOfHealth()
      20. 15.1.20 0x30/31 ChargingVoltage()
      21. 15.1.21 0x32/33 ChargingCurrent()
      22. 15.1.22 0x34/35 TerminateVoltage()
      23. 15.1.23 0x36/0x37/0x38/0x39 Timestamp()
      24. 15.1.24 QMax Cycles() 0x3A/3B
      25. 15.1.25 0x3C/3D DesignCapacity()
      26. 15.1.26 0x3E/3F AltManufacturerAccess()
      27. 15.1.27 0x40/0x5F MACData()
      28. 15.1.28 0x60 MACDataChecksum()
      29. 15.1.29 0x61 MACDataLength()
      30. 15.1.30 0x62/63 VoltHiSetThreshold
      31. 15.1.31 0x64/65 VoltHiClearThreshold
      32. 15.1.32 0x66/67 VoltLoSetThreshold
      33. 15.1.33 0x68/69 VoltLoClearThreshold
      34. 15.1.34 0x6A TempHiSetThreshold
      35. 15.1.35 0x6B TempHiClearThreshold
      36. 15.1.36 0X6C TempLoSetThreshold
      37. 15.1.37 0x6D TempLoClearThreshold
      38. 15.1.38 0x6E InterruptStatus()
      39. 15.1.39 0x6F SOCSetDeltaThreshold
    2. 15.2 0x00, 0x01 ManufacturerAccess() and 0x3E, 0x3F AltManufacturerAccess()
      1. 15.2.1  AltManufacturerAccess() 0x0001 Device Type
      2. 15.2.2  AltManufacturerAccess() 0x0002 Firmware Version
      3. 15.2.3  AltManufacturerAccess() 0x0003 Hardware Version
      4. 15.2.4  AltManufacturerAccess() 0x0004 Instruction Flash Signature
      5. 15.2.5  AltManufacturerAccess() 0x0005 Static DF Signature
      6. 15.2.6  AltManufacturerAccess() 0x0006 Chemical ID
      7. 15.2.7  AltManufacturerAccess() 0x0007 Pre_MACWrite
      8. 15.2.8  AltManufacturerAccess() 0x0008 Static Chem DF Signature
      9. 15.2.9  AltManufacturerAccess() 0x0009 All DF Signature
      10. 15.2.10 AltManufacturerAccess() 0x000B SHELF Enable
      11. 15.2.11 AltManufacturerAccess() 0x000C SHELF Disable
      12. 15.2.12 AltManufacturerAccess() 0x0010 SHUTDOWN Mode
      13. 15.2.13 AltManufacturerAccess() 0x0012 Device Reset
      14. 15.2.14 AltManufacturerAccess() 0x0015 SHIP Mode Enable
      15. 15.2.15 AltManufacturerAccess() 0x0016 SHIP Mode Disable
      16. 15.2.16 AltManufacturerAccess() 0x0017 QMax Day
      17. 15.2.17 AltManufacturerAccess() 0x001F CHG FET Toggle
      18. 15.2.18 AltManufacturerAccess() 0x0020 DSG FET Toggle
      19. 15.2.19 AltManufacturerAccess() 0x0021 Gauging
      20. 15.2.20 AltManufacturerAccess() 0x0022 FET Control
      21. 15.2.21 AltManufacturerAccess() 0x0023 Lifetime Data Collection
      22. 15.2.22 AltManufacturerAccess() 0x0028 Lifetime Data Reset
      23. 15.2.23 AltManufacturerAccess() 0x002D CALIBRATION Mode
      24. 15.2.24 AltManufacturerAccess() 0x002E Lifetime Data Flush
      25. 15.2.25 AltManufacturerAccess() 0x002F Lifetime Data SPEED UP Mode
      26. 15.2.26 AltManufacturerAccess() 0x0030 Seal Device
      27. 15.2.27 AltManufacturerAccess() 0x0035 Security Keys
      28. 15.2.28 AltManufacturerAccess() 0x0041 Device Reset
      29. 15.2.29 AltManufacturerAccess() 0x0047 Tambient Sync
      30. 15.2.30 AltManufacturerAccess() 0x004A Device Name
      31. 15.2.31 AltManufacturerAccess() 0x004B Device Chem
      32. 15.2.32 AltManufacturerAccess() 0x004C Manufacturer Name
      33. 15.2.33 AltManufacturerAccess() 0x004D Manufacture Date
      34. 15.2.34 AltManufacturerAccess() 0x004E Serial Number
      35. 15.2.35 AltManufacturerAccess() 0x0054 OperationStatus
        1. 15.2.35.1 Operation Status A
        2. 15.2.35.2 Operation Status B
      36. 15.2.36 AltManufacturerAccess() 0x0055 ChargingStatus
        1. 15.2.36.1 Temp Range
        2. 15.2.36.2 Charging Status
      37. 15.2.37 AltManufacturerAccess() 0x0056 GaugingStatus
      38. 15.2.38 AltManufacturerAccess() 0x0057 ManufacturingStatus
      39. 15.2.39 AltManufacturerAccess() 0x0060 Lifetime Data Block 1
      40. 15.2.40 AltManufacturerAccess() 0x0061 Lifetime Data Block 2
      41. 15.2.41 AltManufacturerAccess() 0x0062 Lifetime Data Block 3
      42. 15.2.42 ManufacturerAccess() 0x0063 Lifetime Data Block 4
      43. 15.2.43 ManufacturerAccess() 0x0064 Lifetime Data Block 5
      44. 15.2.44 AltManufacturerAccess() 0x0065–0x006B Lifetime SOC Range Table Data Blocks
      45. 15.2.45 AltManufacturerAccess() 0x006C Lifetime Data Block 13
      46. 15.2.46 AltManufacturerAccess() 0x0070 ManufacturerInfo
      47. 15.2.47 AltManufacturerAccess() 0x0071 DAStatus1
      48. 15.2.48 AltManufacturerAccess() 0x0072 DAStatus2
      49. 15.2.49 AltManufacturerAccess() 0x0073 ITStatus1
      50. 15.2.50 AltManufacturerAccess() 0x0074 ITStatus2
      51. 15.2.51 AltManufacturerAccess() 0x0075 ITStatus3
      52. 15.2.52 AltManufacturerAccess() 0x0077 FCC_SOH
      53. 15.2.53 AltManufacturerAccess() 0x0078 Filtered Capacity
      54. 15.2.54 AltManufacturerAccess() 0x007A ManufacturerInfoB
      55. 15.2.55 AltManufacturerAccess() 0x007B ManufacturerInfoC
      56. 15.2.56 AltManufacturerAccess() 0x0097 FET Control Override
      57. 15.2.57 AltManufacturerAccess() 0x00A3 System Reset Enable
      58. 15.2.58 AltManufacturerAccess() 0x00A4 System Reset
      59. 15.2.59 AltManufacturerAccess() 0x00B0 ChargingVoltageOverride
      60. 15.2.60 AltManufacturerAccess() 0x00B1 BattSenseOutput
      61. 15.2.61 AltManufacturerAccess() 0x00E0 Ra Table Cell0
      62. 15.2.62 AltManufacturerAccess() 0x0F00 ROM Mode
      63. 15.2.63 Data Flash Access() 0x4000–0x5FFF
      64. 15.2.64 AltManufacturerAccess() 0x7C40 Switch to HDQ
      65. 15.2.65 AltManufacturerAccess() 0xF080 Exit Calibration Output Mode
      66. 15.2.66 AltManufacturerAccess() 0xF081 Output CC and ADC for Calibration
      67. 15.2.67 AltManufacturerAccess() 0xF083 OutputTemperatureCal
      68. 15.2.68 AltManufacturerAccess() 0xF0A0 ProtectorCalibration
      69. 15.2.69 AltManufacturerAccess() 0xF0A1 ProtectorImage1
      70. 15.2.70 AltManufacturerAccess() 0xF0A2 ProtectorImage2
      71. 15.2.71 AltManufacturerAccess() 0xF0A3 ProtectorImageSave
      72. 15.2.72 AltManufacturerAccess() 0xF0A4 ProtectorImageLock
      73. 15.2.73 AltManufacturerAccess() 0xF0A5 ProtectorFactoryConfig
  17. 16Data Flash Access and Format
    1. 16.1 Data Flash Access
      1. 16.1.1 Minimum Voltage
    2. 16.2 Data Formats
      1. 16.2.1 Unsigned Integer
      2. 16.2.2 Integer
      3. 16.2.3 Floating Point
      4. 16.2.4 Hex
      5. 16.2.5 String
  18. 17Data Flash Summary
    1. 17.1 Data Flash Summary
  19. 18Revision History

7.9 Impedance Track (IT) Configuration Options

The BQ27Z746 provides several Impedance Track configuration options to fine-tune the gauging performance. These configurations can be turned on or off through the corresponding flags in Settings: IT Gauging Configuration and I2C Gauging Configuration.

[LOCK0]: After a discharge event, cell voltage usually recovers to a slightly higher voltage during RELAX mode. A new OCV reading during this time can result in a slightly higher state-of-charge. This flag provides an option to keep RemainingCapacity() and RelativeStateOfCharge() locked during relaxation after 0% and GaugingStatus()[FD] are reached during discharge. The lock is removed once CHARGE mode is entered.

[1PERCENT_HOLD]: When enabled, holds the RSOC value at 1% until Term Voltage has been reached during discharge.

[RSOC_HOLD]: An IT simulation will run at the onset of discharge. If charge terminates at a low temperature and discharge occurs at a higher temperature, the difference in temperature could cause a small rise of RSOC for a short period of time at the beginning of discharge. This flag option prevents RSOC rises during discharge. RSOC will be held until the calculated value falls below the actual state.

[RSOCL]: When set, RSOC will be held to 99% until charge termination is detected.

[RFACTSTEP]: The gauge keeps track of the change in Ra over 15 updates. It is limited to 1.5 max. During an Ra update, if (new Ra)/(old Ra) > 1.5 or < 0.5, the gauge will take different actions based on the setting of this flag.

If the flag is set to 1 (default), the gauge allows Ra to update once using the max factor of 1.5 or min factor of 0.5, then disables the Ra update. If this flag is set to 0, the gauge will not update Ra, but will disable it. It is recommended to keep the default setting. In both cases, GaugingStatus()[RDIS] is set.

[OCVFR]: An OCV reading is taken when a dV/dt condition is met. This is not the case if charging stops within or below the flat voltage region, which varies with ChemID. The change of cell voltage in this region is very small; therefore, the same voltage error can correspond to a larger DOD error. This flag is set by default. The device waits 48 hours before taking an OCV reading if charging stops prematurely. A short discharge will not cancel this 48-hour wait. An OCV reading is taken when the dV/dt condition is met. To reduce test time during evaluation, it is helpful to remove the 48-hour wait-time requirement.

[DOD0EW]: DOD0 readings have an associated error based on the elapsed time since the reading, the conditions at the time of the reading (reset, charge termination, and so on), the temperature, and the amount of relax time at the time of the reading, among others. This flag provides an option to take into account both the previous and new calculated DOD0, which are weighted according to their respective accuracies. This can result in improved accuracy and in reduction of RSOC jumps after relaxation.

[LFP_RELAX]: When enabled, this bit activates an additional functionality only if the chemistry ID programmed indicates a LiFePO4 chemistry (ID 0x4xxx or 0x04xx). Having this bit enabled with a non-LiFePO4 cell type does not introduce any behavioral modifications.

LiFePO4 has a unique, slow configuration relaxation near full charge. The slow decaying voltage causes RSOC to continue to drop every 5 hours. Depending on the full charge taper current, the fully settled voltage could be close to or even below FlatVoltMax in some cases. If [LFP_RELAX] is enabled and the LiFePO4 chemID is selected, [OCVFR] will be set on exit from CHARGE mode regardless of voltage or state of charge. For [OCVFR] to clear, a relaxation of 48 hours or non-trivial discharge must occur. A non-trivial discharge is indicated when the cell voltage in relaxation falls below FlatVoltMin. The QMax update is unlikely disabled because DOD will not update due to [OCVFR] forcing the 48-hour timeout, and voltage likely relaxing into the flat zone. Therefore, the QMax update takes an alternative approach: Once full charge occurs ([FC] bit set), DOD0 = Dod_at_EOC is automatically assigned and valid for a QMax update. [VOK] is set if there is no QMax update. If QMax is updated, [VOK] is cleared. The DOD error, as a result of this action, is zero or negligible because in the LiFePO4 table, the OCV voltage corresponding to DOD = 0 is much lower. [RSOC_CONV]: This function is also called fast resistance scaling. It is an option to address the convergence of RSOC to 0% at a low temperature and a very high rate of discharge. See Fast Resistance Scaling for more details.

[FAST_QMAX_LRN] and [FAST_QMAX_FLD]: The first flag enables Fast QMax during the learning cycle when Update Status = 06. The second bit enables Fast QMax in the field when Update Status ≥ 06. See Fast QMax Update Conditions for more details on Fast QMax.

[FF_NEAR_EDV]: Fast filter near EDV. If this flag is set to 1, the gauge applies an alternative filter, Near EDV Ra Param Filter, for an Ra update in the fast scaling region (starting around 10% RSOC). This flag should be kept to 1 as a default. If this flag is set to 0, the gauge uses the regular Ra filter, Resistance Parameter Filter. Both DF filters should not be changed from the default value.

[SMOOTH]: If this bit is set to 1, the smoothing engine is enabled. For more details, see Smoothing Engine, which covers [RELAX_JUMP_OK], [RELAX_SMOOTH_OK], [CHG_100_SMOOTH_OK], and [DSG_0_SMOOTH_OK] as further configuration to the smoothing engine.

[CSYNC]: If this bit is set to 1, the gauge synchronizes RemainingCapacity() to FullChargeCapacity() at valid charge termination.

[CCT]: This bit provides an option to use FullChargeCapacity() (when [CCT] = 1) or DesignCapacity() (when [CCT] = 0) for cycle count threshold calculation. Regardless of whether FullChargeCapacity() or DesignCapacity() is selected for cycle count threshold calculation, the minimum cycle count threshold is always 10% of DesignCapacity(). This helps to avoid any erroneous cycle count increment caused by an extremely low FullChargeCapacity() or improper settings of Cycle Count Percentage.

[TAMB_SYNC_SIM]: If this bit is set to 1, the gauge performs an IT simulation after the TambientSync() command is received to use the newly recorded ambient temperature. This IT simulation could produce a change in RelativeStateOfCharge() if [SMOOTH] = 0. If [SMOOTH] = 1, RelativeStateOfCharge() behaves according to the configuration of the smoothing engine.

[AMB_PRED]: If this bit is set to 1, ambient temperature can be predicted during DISCHARGE and CHARGE modes. This can be useful in system applications that experience large increases in ambient temperature during discharges and/or charges without entry to RELAX mode. Ambient temperature prediction is triggered after being in DISCHARGE/CHARGE for Predict Ambient Time, when the system is assumed to be at thermal equilibrium.

[THERM_IV]: If this bit is set to 1, battery heat is held constant near the end of an IT simulation. This helps prevent overestimation of temperature towards the end of discharge, and applies to SOH simulations.

[THERM_SAT]: If this bit is set to 1, IT simulations occurring near termination in a sustained discharge (when thermal saturation is reached) assume simulated temperature to be equal to measured cell temperature. This behavior does NOT apply to SOH simulations.

[FOCV_EN]: If this bit is set to 1, the gauge enables a fast OCV algorithm to predict the final OCV value, which reduces relaxation requirements for QMax updates.

ClassSubclassNameTypeMinMaxDefaultDescription
SettingsConfigurationI2C Gauging ConfigurationH10x000x3F0x20Bit 0: RSOCL—RelativeStateOfCharge() and RemainingCapacity() behavior at end of charge
0 = Actual value shown (default)
1 = Held at 99% until valid charge termination. On entering valid charge termination, updates to 100%
Bit 1: RSOC_HOLD—Prevents RSOC from increasing during discharge
0 = RSOC is not limited.
1 = RSOC is not allowed to increase during discharge.
Bit 2: LOCK0—Keeps RemainingCapacity() and RelativeStateOfCharge() from jumping back during relaxation after 0 was reached during discharge
0 = Disabled (default)
1 = Enabled
Bit 3:RSVD
BIT 4: 1PERCENT_HOLD
0 = Disabled
1= Enabled
Bit 5: TAMB_SYNC_SIM—Ambient Temperature Synchronization Simulation
0 = Disabled
1 = Enabled (default)
Bit 7:6: Reserved
SettingsConfigurationIT Gauging ConfigurationH20x00000xFFFF
0xD5FE		Bit 0: CCT—Cycle count threshold
0 = Use DesignCapacity() for cycle count threshold (default)
1 = Use FullChargeCapacity() for cycle count threshold
Bit 1: CSYNC—Syncs RemainingCapacity() with FullChargeCapacity() at valid charge termination
0 = Not synchronized
1 = Synchronized (default)
Bit 2: RFACTSTEP—Ra factor step
0 = Disabled
1 = Enabled (default)
Bit 3: OCVFR—Open circuit voltage flat region
0 = Disabled
1 = Enabled (default)
Bit 4: DOD0EW—DOD0 error weighting
0 = Disabled
1 = Enabled (default)
Bit 5: RSVD— Do not use.
Bit 6: RSOC_CONV—RSOC convergence (fast resistance scaling)
0 = Disabled
1 = Enabled (default)
Bit 7: FAST_QMAX_LRN—Fast QMax LEARN mode
0 = Disabled
1 = Enabled (default)
Bit 8: FAST_QMAX_FLD—Fast QMax FIELD mode
0 = Disabled
1 = Enabled (default)
Bit 9: RSVD
Bit 10: FF_NEAR_EDV—Fast filter near EDV
0 = Disabled
1 = Enabled (default)
Bit 11: RELAX_JUMP_OK—Enables RSOC Jumps in RELAX mode
0 = Disabled (default)
1 = Enabled
Bit 12: SMOOTH—Smoothing engine
0 = Disabled
1 = Enabled (default)
Bit 13: LFP_RELAX—Lithium iron phosphate relax
0 = Disabled
1 = Enabled
Bit 14: RELAX_SMOOTH_OK—Smoothing in RELAX
0 = Disabled
1 = Enabled (default)
Bit 15: DOD_RSCALE_EN—Configures which DOD the new RaScale is to be applied.
0 = The RaScale is applied to all DODs during IT simulations.
1 = The RaScale is only applied to DODs higher than the DOD where the RaScale is calculated. (default)
SettingsConfigurationIT Gauging ExtH20x00000x003F0x003BBit 0: DSG_0_SMOOTH_OK—Smoothing to 0%
0 = Disabled
1 = Enabled (default)
Bit 1: CHG_100_SMOOTH_OK—Smoothing to 100%
0 = Disabled
1 = Enabled (default)
Bit 2: AMB_PRED—Ambient temperature prediction
0 = Disabled (default)
1 = Enabled
Bit 3: THERM_IV—Thermal model IV heat
0 = Disabled
1 = Enabled (default)
Bit 4: THERM_SAT—Thermal model saturation
0 = Disabled
1 = Enabled (default)
Bit 5: FOCV_EN—Enables fast OCV feature
0 = Disabled
1 = Enabled (default)
Bits 15:6: RSVD