SBOK084 December 2023 SN54SC3T97-SEP , SN54SC3T98-SEP , SN54SC4T00-SEP , SN54SC4T02-SEP , SN54SC4T125-SEP , SN54SC4T32-SEP , SN54SC4T86-SEP
PRODUCTION DATA
The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC4T125-SEP, a radiation-tolerant, quadruple buffer translator gate with 3-state output CMOS logic level shifter. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC4T125-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg as 125°C.
The SN54SC4T125-SEP Single-Event Latch-Up (SEL) radiation report covers the SEL performance of all seven devices listed below. The SN54SC4T125-SEP device covers all functional blocks and active die area of the other six devices, which is why the device was selected for single-event effect testing for this group of logic gate devices.